MJD112RL Allicdata Electronics
Allicdata Part #:

MJD112RL-ND

Manufacturer Part#:

MJD112RL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 2A DPAK
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 2A ...
DataSheet: MJD112RL datasheetMJD112RL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Power - Max: 1.75W
Frequency - Transition: 25MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD112
Description

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MJD112RL transistors are a type of bipolar junction transistors (BJT)–a type of single transistor that is used primarily in amplifying or switching applications. The three main elements of a bipolar transistor are the base, collector, and emitter. MJD112RL transistors are also known as PNP transistors as they act as switches in switching applications, so the collector terminal is at a higher voltage than the emitter.

The working principle of a MJD112RL transistor is based on the behavior of a majority carrier in an N-type semiconductor material. In this transistor, majority carriers move from the emitter to the collector and minority carriers move from the collector to the emitter. It works using the biasing of the base terminal, wherein a voltage difference is applied between the base and the emitter. As a result of this biasing, electrons move toward the emitter and holes move toward the collector causing a current flow. This current flow is called the collector current, and it is controlled by the base voltage.

The main advantage of using a MJD112RL transistor is its low noise and high performance. Another benefit is that these transistors are relatively low-cost compared to other transistors, making them ideal for many different applications. Additionally, the MJD112RL transistors are highly reliable, and have high frequency range, which allows them to be used for radio frequency (RF) communication.

MJD112RL transistors are used in a wide variety of applications such as audio amplifiers, power controllers, automated systems and various communication systems. These transistors are mostly used in switching circuits where a low voltage signal is amplified and subsequently used as a control voltage in a higher voltage circuit. MJD112RL transistors are also used to produce low-power analog and digital signals.

In audio applications, MJD112RL transistors can be used to provide a gain of the sound signal, where it amplifies the low-level signals and provides power to the output. In power controllers, these transistors are used to control the voltage and current of the circuit, as well as to prevent overloading. In automated systems, they are used to sense the presence of an object or trigger a switch. Furthermore, these transistors are used to process signals in various communication systems such as amplifying signals, demodulating signals and detecting low-level signals.

In conclusion, MJD112RL transistors are highly versatile transistors used in a number of applications, from audio amplifiers to automated systems. With its low noise and high performance, these transistors are suitable for a wide range of applications. Additionally, their reliability and low cost make them an ideal choice for many situations.

The specific data is subject to PDF, and the above content is for reference

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