Allicdata Part #: | MJD128T4GOSTR-ND |
Manufacturer Part#: |
MJD128T4G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 120V 8A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 120V 8A ... |
DataSheet: | MJD128T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.16412 |
5000 +: | $ 0.15279 |
12500 +: | $ 0.15091 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 80mA, 8A |
Current - Collector Cutoff (Max): | 5mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 4A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 4MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Description
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The MJD128T4G is a low-noise and high-efficiency NPN general-purpose transistors specifically designed and manufactured for fast switching applications. It is a single bipolar junction transistor (BJT) that can be used in a wide range of applications, including motor control and data acquisition.The MJD128T4G is fabricated using high-precision lithographic techniques and is available in two versions: the TO-220 package and the P (Bent Lead) package. Both versions feature a single emitter and collector configuration.The MJD128T4G is designed to withstand high voltages and offers a low saturation voltage and high collector-to-emitter breakdown voltage. It also features a low junction-to-case thermal resistance, making it well-suited for high-power applications. Additionally, the MJD128T4G features a low-noise characteristic that makes it ideal for noise-sensitive applications.The MJD128T4G works by the flow of minority carriers from the emitter to the collector. When the base-emitter junction is forward biased, the majority carriers from the base region are injected into the emitter. These carriers cross the depletion region, which allows current to flow from the emitter to the collector. This process is known as “hole injection.”The MJD128T4G also features a low-noise characteristic which allows it to reduce noise when used in low-noise applications. The low-noise characteristic results in low-noise operation when compared to other BJTs.The MJD128T4G is well-suited for a wide range of applications, including motor control, data acquisition, power management, industrial control, and consumer electronics. It is particularly well-suited for high-speed switching applications where fast response time and low noise are desired. As such, it is often used in control systems and data acquisition systems.The MJD128T4G is a reliable and efficient BJT that is highly versatile and suitable for a wide range of applications. Its low-noise characteristics make it an ideal choice for noise-sensitive applications. Additionally, its high voltage and low saturation voltage characteristics make it well-suited for high-power applications. By combining fast switching and low-noise characteristics, the MJD128T4G is an ideal choice for motor control, data acquisition, and a wide range of industrial and consumer electronics applications.The specific data is subject to PDF, and the above content is for reference
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