MJD117TF Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	3V @ 40mA, 4A
Current - Collector Cutoff (Max):	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 2A, 3V
Power - Max:	1.75W
Frequency - Transition:	25MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Base Part Number:	MJD117

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MJD117TF application field and working principle

MJD117TF is a type of transistor called Bipolar Junction Transistor (BJT), and it falls into the category of Single Transistors. It is an NPN transistor, meaning that it uses negative charge when it is switched on. Thus, this type of transistor is relatively suitable for low power and signal switching applications.MJD117TF is a bipolar NPN transistor mainly used for low current, low power and low noise applications. Commonly used in switching, signal amplification and various power supply applications, it has the advantages of small size and light weight, low voltage loss, fast switching speed, and so on. As a result, it is widely used in various electronic products such as telephones, printers, amplifiers, digital signal detectors, etc.The most important feature of an NPN transistor is that current flows easier from emitter to collector than vice versa. This is known as the "PNP Resistance". When a small current is applied to the base of the transistor, the "PNP Resistance" increases and the transistor allows a larger current flow from emitter to collector than vice versa. In this way, the current flowing from the emitter to the collector can be regulated by the base current, thus controlling the output power.The specific working principle of MJD117TF is as follows: Firstly, the base current is applied to the base terminal and it is amplified by the base to emitter junction. Secondly, the amplified current will pass through the collector and emitter. Finally, when the voltage applied at the base is cut off, the transistor will switch off and the current flow to the collector will stop. At the same time, the characteristics of the MJD117TF are very stable and reliable. It is able to maintain a relatively constant current for a long time. The breakdown voltage of the transistor is about 140V and its maximum current is 0.2A. Moreover, it has a high current gain of 1000 which means that it can provide large current from a small base current. Moreover, it has low noise which is beneficial for applications requiring minimal interference.In terms of application, the MJD117FT can be used in a variety of circuits. It can be used as a switching element, allowing current to pass through a circuit. It can also be used as an amplifier, amplifying electrical signals so that they can be used in different circuits. Furthermore, it can be used in a voltage multiplier circuit, helping to increase the output voltage. In addition, it can be used as a rectifier circuit, allowing current to flow in one orientation.All in all, the MJD117FT is an NPN transistor which is mostly used for low current and low power applications. It has the advantages of small size, low voltage loss, fast switching speed, and high current gain. In terms of application, it can be used for various types of circuits such as switching, signal amplification, voltage multiplier or rectifier circuits. It is a reliable and stable transistor that has a high current gain, low noise, and a breakdown voltage of 140V.

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