MJD127T4G Allicdata Electronics
Allicdata Part #:

MJD127T4GOSTR-ND

Manufacturer Part#:

MJD127T4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 100V 8A DPAK
More Detail: Bipolar (BJT) Transistor PNP - Darlington 100V 8A ...
DataSheet: MJD127T4G datasheetMJD127T4G Datasheet/PDF
Quantity: 17500
Stock 17500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 1.75W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD127
Description

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The MJD127T4G is a Transistors - Bipolar (BJT) - Single that can be used in a variety of applications. It is a high performance device with a wide range of features and functions. This transistor is ideal for any application where efficient power management is desired. The MJD127T4G is a reliable device that is easy to use and has low power consumption.

The MJD127T4G is a discrete power MOSFET transistor that has been produced by the Japanese semiconductor manufacturer Rohm. The chip is available in two through hole packages that include SOT-226 and SOT-223. The chip has a drain-source rating of 200 volts, 4 amps, and 40 watts. The on-state resistance of the chip is typically 75 milliohms. This make it an ideal transistor for high power applications.

The MJD127T4G is usually used in applications such as interface boards, motor control circuits, automotive applications, and other industrial applications. It has excellent temperature characteristics and good threshold voltage temperature coefficients, making it suitable for use in harsh environments. The transistor also has a low gate-source capacitance and a low gate charge. These features make the MJD127T4G a great transistor for power management.

The working principle of the MJD127T4G is based on insulated-gate bipolar technology (IGBT). This type of circuit allows for efficient current conduction and switching due to the low on-state resistance of the transistor. The chip can be used as a switch to control the flow of electric current in a circuit. When the voltage at the gate is low, current does not flow in the circuit. When the gate voltage is increased, electric current can flow through the transistor. The electric current is then controlled using the gate voltage.

The MJD127T4G can be used in a variety of applications such as motor control circuits, solar power panels, electric power systems, and more. The high voltage and current specifications of the MJD127T4G make it an ideal transistor for power management applications. It is also an ideal component for creating efficient interface solutions and electronic control systems. This transistor is reliable and easy to use, which is why it is so popular in so many industries.

The specific data is subject to PDF, and the above content is for reference

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