Allicdata Part #: | MJD127T4GOSTR-ND |
Manufacturer Part#: |
MJD127T4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 100V 8A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 100V 8A ... |
DataSheet: | MJD127T4G Datasheet/PDF |
Quantity: | 17500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 80mA, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 4A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 4MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD127 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MJD127T4G is a Transistors - Bipolar (BJT) - Single that can be used in a variety of applications. It is a high performance device with a wide range of features and functions. This transistor is ideal for any application where efficient power management is desired. The MJD127T4G is a reliable device that is easy to use and has low power consumption.
The MJD127T4G is a discrete power MOSFET transistor that has been produced by the Japanese semiconductor manufacturer Rohm. The chip is available in two through hole packages that include SOT-226 and SOT-223. The chip has a drain-source rating of 200 volts, 4 amps, and 40 watts. The on-state resistance of the chip is typically 75 milliohms. This make it an ideal transistor for high power applications.
The MJD127T4G is usually used in applications such as interface boards, motor control circuits, automotive applications, and other industrial applications. It has excellent temperature characteristics and good threshold voltage temperature coefficients, making it suitable for use in harsh environments. The transistor also has a low gate-source capacitance and a low gate charge. These features make the MJD127T4G a great transistor for power management.
The working principle of the MJD127T4G is based on insulated-gate bipolar technology (IGBT). This type of circuit allows for efficient current conduction and switching due to the low on-state resistance of the transistor. The chip can be used as a switch to control the flow of electric current in a circuit. When the voltage at the gate is low, current does not flow in the circuit. When the gate voltage is increased, electric current can flow through the transistor. The electric current is then controlled using the gate voltage.
The MJD127T4G can be used in a variety of applications such as motor control circuits, solar power panels, electric power systems, and more. The high voltage and current specifications of the MJD127T4G make it an ideal transistor for power management applications. It is also an ideal component for creating efficient interface solutions and electronic control systems. This transistor is reliable and easy to use, which is why it is so popular in so many industries.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MJD112-001 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 100V 2A IP... |
MJD127T4 | STMicroelect... | -- | 1000 | TRANS PNP DARL 100V 8A DP... |
MJD127TF | ON Semicondu... | -- | 1000 | TRANS PNP DARL 100V 8A DP... |
MJD117-1G | ON Semicondu... | 0.48 $ | 2500 | TRANS PNP DARL 100V 2A IP... |
MJD112RL | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 100V 2A DP... |
MJD117 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 100V 2A DP... |
MJD117-001 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 100V 2A IP... |
MJD128T4 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 120V 8A DP... |
MJD117RLG | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 100V 2A DP... |
MJD18002D2T4G | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 450V 2A DPAKBip... |
MJD128T4G | ON Semicondu... | 0.18 $ | 1000 | TRANS PNP DARL 120V 8A DP... |
MJD112T4 | STMicroelect... | -- | 1000 | TRANS NPN DARL 100V 2A DP... |
MJD112-TP | Micro Commer... | 0.15 $ | 1000 | TRANS NPN 100V 2A DPAKBip... |
MJD127-TP | Micro Commer... | 0.15 $ | 1000 | TRANS PNP 100V 8A DPAKBip... |
MJD112RLG | ON Semicondu... | 0.16 $ | 1000 | TRANS NPN DARL 100V 2A DP... |
MJD112T4G | ON Semicondu... | -- | 2500 | TRANS NPN DARL 100V 2A DP... |
MJD117T4 | STMicroelect... | -- | 7500 | TRANS PNP DARL 100V 2A D-... |
MJD117T4G | ON Semicondu... | 0.16 $ | 10000 | TRANS PNP DARL 100V 2A DP... |
MJD117TF | ON Semicondu... | 0.18 $ | 18000 | TRANS PNP DARL 100V 2A DP... |
MJD122T4 | STMicroelect... | -- | 10000 | TRANS NPN DARL 100V 8A DP... |
MJD122G | ON Semicondu... | 0.47 $ | 14944 | TRANS NPN DARL 100V 8A DP... |
MJD127G | ON Semicondu... | -- | 1037 | TRANS PNP DARL 100V 8A DP... |
MJD122-1 | STMicroelect... | 0.67 $ | 20339 | TRANS NPN DARL 100V 8A TO... |
MJD122-TP | Micro Commer... | 0.15 $ | 25000 | TRANS NPN 100V 8A DPAKBip... |
MJD122T4G | ON Semicondu... | 0.16 $ | 2500 | TRANS NPN DARL 100V 8A DP... |
MJD127T4G | ON Semicondu... | -- | 17500 | TRANS PNP DARL 100V 8A DP... |
MJD122TF | ON Semicondu... | -- | 18000 | TRANS NPN DARL 100V 8A DP... |
MJD112TF | ON Semicondu... | 0.18 $ | 1000 | TRANS NPN DARL 100V 2A DP... |
MJD117G | ON Semicondu... | 0.46 $ | 1498 | TRANS PNP DARL 100V 2A DP... |
MJD112-1G | ON Semicondu... | -- | 2159 | TRANS NPN DARL 100V 2A IP... |
MJD148T4G | ON Semicondu... | 0.2 $ | 2500 | TRANS NPN 45V 4A DPAKBipo... |
MJD112G | ON Semicondu... | -- | 2002 | TRANS NPN DARL 100V 2A DP... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...