MJD148T4G Discrete Semiconductor Products

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MJD148T4G is a type of bipolar (BJT) single transistor manufactured by ON Semiconductor. This transistor is used for many applications and has a variety of features. These features make it an ideal choice for many applications. It is well suited for both switching and amplifying applications and can be used in a variety of ways.

The most common application of the MJD148T4G is to amplify the signals from very low-level sources. It has a gain range of 50 to 600, making it ideal for amplifying audio signals. It also has a wide bandwidth, making it suitable for controlling video signals. Other applications include amplifier circuits, power management circuits, switching circuits, and LED drivers. Additionally, this transistor is also used in motor control circuits and small loudspeakers.

The MJD148T4G is a bipolar silicon transistor. It operates in the frequency range of 1MHz to 100MHz and can handle power levels of up to 200mA. The output impedance is 25 ohms, making it well suited for low-level signals. It also has a very low noise level, which makes it ideal for applications involving sensitive signals. The operating temperature range is between -65 and +150 degrees Celsius, making it usable in a wide range of temperatures and environments.

The working principle of the MJD148T4G is fairly simple. It is a three-terminal device, consisting of an emitter, a base, and a collector. The base of the transistor acts as an input port, allowing voltage to be applied to the device. The current flowing through the base controls the voltage and current that is applied to the collector. The current flowing through the collector, in turn, controls the current flowing through the emitter. This current flow can be used to control other devices or can be used to amplify signals.

The MJD148T4G also has a wide variety of safety features. It has a built-in current limiting feature which prevents excessive current from passing through the transistor. It also has an overvoltage protection feature which prevents unexpected voltage from damaging the device. Additionally, the base-collector breakdown voltage is 400mV, and the base-emitter breakdown voltage is 700mV, making it very resistant to breakdown.

In conclusion, the MJD148T4G is a versatile and reliable transistor that can be used in a variety of applications. Its high gain range and low noise level make it ideal for amplifying signals, while its wide temperature range and safety features make it suitable for a variety of environments. Its three-terminal design and simple working principle make it easy to use and understand. This makes the MJD148T4G an ideal choice for any application that requires a reliable and versatile transistor.

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