MMBT2222AWT3G Discrete Semiconductor Products |
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Allicdata Part #: | MMBT2222AWT3GOSTR-ND |
Manufacturer Part#: |
MMBT2222AWT3G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.6A SC70-3 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 150m... |
DataSheet: | MMBT2222AWT3G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01177 |
30000 +: | $ 0.01060 |
50000 +: | $ 0.00942 |
100000 +: | $ 0.00883 |
250000 +: | $ 0.00785 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 150mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MMBT2222A |
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The MMBT2222AWT3G is a NPN bipolar junction transistor, situated in the Single series within the Bipolar (BJT) Transistors category. This type of transistor is essentially a solid state device, with three connection pins. This device channels current from the collector point to the emitter point when the base point is provided with a voltage and current.
The application field for MMBT2222AWT3G includes computer and power device design, telephone lines, amplifying circuits and the industrial electronics field. More specifically, the MMBT2222AWT3G is suitable for applications involving low-voltage, low-power operations such as small-signal switching and amplifier circuits, as well as logic circuits. In these cases, the device supports a large range of operating temperatures, from -55 to 150°C.
The function of the MMBT2222AWT3G is to act as a switch to control the current that flows between the collector and emitter, as well as amplify voltage or current signals by controlling how much current flows to the collector or emitter. This switching and amplifying is controlled by a small bias current or voltage that is applied to the base pin.
When voltage is applied to the base pin, the transistor turns “on” and the voltage at the collector pin is slightly lower than the applied base voltage, while the potential at the emitter terminal is slightly higher. When the base voltage is removed, the transistor turns “off” and no current flows between the collector and emitter. This is the basic working principle of a BJT transistor.
The MMBT2222AWT3G is a surface-mounted NPN bipolar junction transistor that features low voltage, low power dissipation, surface mountable lead style, low noise, and high gain. Its maximum collector current is 100 mA, the maximum collector-emitter voltage is 30V, the maximum power dissipation is 175 mW, and the gain bandwidth product is 200 MHz. Its operational temperature range is from -65 to +150°C, which make this transistor suitable for a wide variety of applications.
The MMBT2222AWT3G is an ideal choice for producing low-power switching and amplifier circuits, logic gates and telephone line circuits due its NPN structure, low power dissipation and wide operational temperature range. Its unique properties also make it suitable for computer and power device design.
The specific data is subject to PDF, and the above content is for reference
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