Allicdata Part #: | MMBT2222LT3G-ND |
Manufacturer Part#: |
MMBT2222LT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.6A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 600mA 250MHz 300m... |
DataSheet: | MMBT2222LT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBT2222 |
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The MMBT2222LT3G is a general-purpose NPN transistor that is commonly used in a variety of applications. It has a maximum collector current of 250 mA and a maximum collector-emitter breakdown voltage of 60 V. It is often used in switching and amplifier circuits due to its high gain and low noise characteristics.
The MMBT2222LT3G is a bipolar junction transistor (BJT), which is a type of active semiconductor device consisting of three layers of semiconductor material. The term bipolar indicates that the device has both N-type and P-type materials in its construction. The MMBT2222LT3G has a P-type base and an N-type collector and emitter. This type of transistor is known as a single BJT, as it contains only one junction between the base-emitter and the collector-emitter.
The proper functioning of the MMBT2222LT3G requires the application of an input current and/or voltage, with the output current or voltage being significantly higher than the input. By correctly biasing the base-emitter junction, the collector current will be controlled by the current flowing between the base and the emitter. As collector current increases, the relation between input and output current will be exponential.
The MMBT2222LT3G can be used in a wide range of applications such as switch mode power supplies, motor control systems, and voltage regulation. It is also commonly used in amplifying circuits as it has a high gain and low noise characteristics. This makes it an ideal choice for low-noise applications, such as RF amplifiers and microwave amplifiers.
The MMBT2222LT3G is also used in many audio applications. It can be used to create preamplifiers and amplifiers, as well as other audio circuitry. It can also be used in audio signal switching applications, such as creating multiple outputs from a single input. Additionally, it can be used in multiplexers and demultiplexers, allowing for the selection of a single signal from many different sources.
The MMBT2222LT3G is also often used in digital circuits due to its very high switching speed. It can be used to construct logic circuits and in multiplexers and demultiplexers. Moreover, it can be used in memory circuits and in analog-to-digital and digital-to-analog conversion circuits.
In summary, the MMBT2222LT3G is a versatile general-purpose NPN transistor that can be used in a variety of different applications. It is classified as a single transistor and is commonly used in switch mode power supplies, motor control systems, audio circuits, digital circuits, and many other applications due to its high gain and low noise characteristics.
The specific data is subject to PDF, and the above content is for reference
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