Allicdata Part #: | MMBT3904LT3GOSTR-ND |
Manufacturer Part#: |
MMBT3904LT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.2A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 300m... |
DataSheet: | MMBT3904LT3G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 300mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBT3904 |
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Introduction to MMBT3904LT3G
MMBT3904LT3G is a bipolar junction transistor (BJT) series manufactured by ON Semiconductor. This transistor is a Single type, meaning that it has only two terminals, the emitter and collector. This BJT series is used in a variety of industrial, medical and consumer applications. It is designed to help with the switching, amplification and signal conditioning in various circuits. In this article, we will discuss the applications for MMBT3904LT3G as well as its working principle.
Applications of MMBT3904LT3G
MMBT3904LT3G is used in a variety of electronic applications. It is highly valued due to its low gain and low power consumption. This makes it ideal for a variety of low-power applications, such as small battery-powered devices. It can also be used in signal conditioning and amplification circuit as it can provide a high output current with a wide range of variation. In addition, this BJT can be used in analog circuits and in applications that require a low voltage drop, such as LED lighting. In summary, MMBT3904LT3G can be used in a multitude of consumer, medical and industrial applications.
Working Principle of MMBT3904LT3G
MMBT3904LT3G is a BJT. BJTs are three-terminal devices with a current flowing between the collector and emitter. This current is controlled by the base. The current flow from the base to the collector is referred to as "forward bias", while the current flow from the collector to the base is called "reverse bias". A BJT works by allowing a current to flow between the base and the collector when forward bias is present. This current is amplified by the transistor, thereby increasing the output voltage. The output voltage is proportional to the input voltage. The output current can also be increased by increasing the base current.
In summary, BJTs amplify current and convert existing current into higher output voltage. The base-collector voltage of a BJT is usually between 0.2 and 0.7 volts, depending on the type of transistor. MMBT3904LT3G can be used in a variety of applications that require amplification and signal conditioning, thanks to its low gain and low power consumption.
Conclusion
MMBT3904LT3G is a Single type of bipolar junction transistor manufactured by ON Semiconductor. This BJT series is used in a variety of consumer, medical and industrial applications that require amplification, signal conditioning or low-power switching. This transistor has a low gain and low power consumption, which makes it ideal for applications where energy efficiency is a priority. The working principle of MMBT3904LT3G involves forward and reverse bias, allowing a current to flow between the base and the collector, which can be amplified and converted into a higher output voltage. In conclusion, MMBT3904LT3G is a great transistor for applications requiring amplification and signal conditioning.
The specific data is subject to PDF, and the above content is for reference
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