MMBT3904T-7-F Discrete Semiconductor Products |
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Allicdata Part #: | MMBT3904T-FDITR-ND |
Manufacturer Part#: |
MMBT3904T-7-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 40V 0.2A SOT523 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 150m... |
DataSheet: | MMBT3904T-7-F Datasheet/PDF |
Quantity: | 216000 |
Power - Max: | 150mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Base Part Number: | MMBT3904 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
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MMBT3904T-7-F is a type of bipolar junction transistor (BJT). It is a single PNP transistor that is able to switch, amplify and buffer signals. In many circuits, it can be used as a signal switch, controlling the current flow between pins in either direction. In addition, it can be used to amplify small signals to a more significant magnitude. It can also be used as a buffer, meaning it can store a small current, allowing other devices to draw current while keeping the base current at a steady level.
MMBT3904T-7-F is mainly used in low-power small-signal audio and amplifying circuit applications. It is also suitable for use in voltage-controlled switches, low-power switching applications, sample-and-hold circuits, linear amplifier circuits, and high frequency oscillator circuits. Due to its low power consumption, it is often favored for battery-operated equipment. This type of transistor is capable of providing up to 350 milliwatts of power, making it suitable for most small-signal applications.
The working principle of MMBT3904T-7-F involves a positive influx of electrons at the base pin. This influx creates a depletion region that can be used to control the flow of current between the emitter and collector pins on the transistor. When the base voltage is high enough, the electromotive force at the emitter-base junction is great enough to cause electrons to start flowing from the emitter to the collector. The base-emitter junction is forward biased, and the base created in the middle of the device causes an electric field that will exert a force on electrons travelling through the transistor, preventing them from returning to the emitter. The emitter-base and collector-base junctions are both reverse biased, meaning that only electrons that are travelling from the emitter toward the base will be absorbed by the collector, resulting in current flowing from the collector to the emitter.
MMBT3904T-7-F is an excellent choice for those seeking to protect signals, amplify and switch in low-power applications. It is highly efficient, and offers superior performance and reliability compared to other transistors. Its small size makes it easy to integrate into a variety of circuit designs. Furthermore, its low power consumption ensures that it won\'t significantly increase the power requirements of a given system.
The specific data is subject to PDF, and the above content is for reference
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