MMBT5089LT1G Allicdata Electronics
Allicdata Part #:

MMBT5089LT1GOSTR-ND

Manufacturer Part#:

MMBT5089LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.05A SOT23
More Detail: Bipolar (BJT) Transistor NPN 25V 50mA 50MHz 300mW ...
DataSheet: MMBT5089LT1G datasheetMMBT5089LT1G Datasheet/PDF
Quantity: 36000
Stock 36000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Power - Max: 300mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT5089
Description

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The MMBT5089LT1G is a high-performance NPN transistor made with a surface-mounted plastic package. It is a bipolar junction transistor (BJT) with single configuration. This specific part of transistor was introduced to increase the power capability, in order to improve the device’s performance and make it easier to stash away and carry. The MMBT5089LT1G has various applications, from audio amplifiers to radio frequency amplifiers to signal switching purposes.

Features

The features of the MMBT5089LT1G are as follows:

  • It has an operating temperature range from - 65 °C to + 150 °C.
  • It has an hFE range from 600 to 800.
  • It has a collector current range from 0.2A to 0.5A.
  • Its collector-base voltage is between 30 and 70V.
  • It has a power rating of 500mW.

Working Principle

The working principle of the MMBT5089LT1G is quite simple. The current flows through the emitter to the collector when the base is biased and the transistor is said to be in “ON” mode. As the voltage increases, more current flows and the device is said to be in “Saturation” mode. When the voltage is low, the current stops flowing and the transistor is said to be in “OFF” mode.

Applications

Because of its high performance and excellent power handling capabilities, the MMBT5089LT1G transistor can be used in a variety of applications. Some of those applications are:

  • For general purpose switching, it can be used for flip-flop electronics and logic circuits.
  • For radio frequency devices, it can be used for amplifying signals in devices such as baby monitors, two-way radios, walkie-talkies, and wireless devices.
  • For audio amplifier circuits, it can be used for power amplifiers and small-scale audio amplifiers.
  • It can also be used for timer circuits.

Conclusion

In conclusion, the MMBT5089LT1G is a high-performance NPN transistor that provides excellent power handling capabilities and reliable performance. The working principle of the transistor is quite simple: when the base is biased and the voltage is increased, current flows and the transistor is said to be in “ON” mode. When the voltage is low, current stops flowing and the device is said to be in “OFF” mode. The MMBT5089LT1G can be used for general purpose switching, audio amplifier circuits, radio frequency devices, and timer circuits.

The specific data is subject to PDF, and the above content is for reference

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