Allicdata Part #: | MMBT5401-G-ND |
Manufacturer Part#: |
MMBT5401-G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | TRANS PNP 150V 0.6A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 300... |
DataSheet: | MMBT5401-G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02921 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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MMBT5401-G is a NPN epitaxial silicon planar bipolar junction transistor with high voltage, high current and high frequency characteristics. It is a low-cost, low-power transistor that is often used in applications such as switching, amplification, and oscillation. The main features of the MMBT5401-G are its low saturation voltage, low on-state resistance, and low leakage current.
The MMBT5401-G can be used in a variety of applications, including linear and audio amplifiers, switching power supplies, motor control circuits, and audio frequency circuits. Additionally, it is useful in low-noise, high-frequency applications such as amplifier circuits, clock circuits, and voltage-controlled oscillators. This device is an excellent choice for any application that requires a reliable and cost-effective switching transistor.
The MMBT5401-G is a standard three-terminal device with an emitter, base, and collector. It is manufactured using a thin-film epitaxial process. This manufacturing method ensures that the device has the necessary electrical and thermal characteristics for efficient, reliable operation. The emitter and collector are connected through the device’s base, which is manufactured using a thin-film epitaxial process.
The working principle of MMBT5401-G is based on the concept of a bipolar junction transistor (BJT). It consists of two P-type and N-type semiconductor layers. When a voltage is applied to the base-emitter junction, it forms an electrically active region which allows for the flow of current between the base and the emitter. As the base current increases, this in turn increases the collector current, allowing for efficient amplification of the input signal. The current gain of the MMBT5401-G is typically on the order of 50 to 100.
The MMBT5401-G is designed for a wide range of uses, making it an ideal choice for applications requiring low current, low power consumption, and a high degree of reliability. In addition, the device is relatively simple to use and understand, which makes it a good choice for hobbyists and professionals alike. Its ease of use and cost-effective design make it a popular choice in applications such as switching, power supplies, and amplifier circuits.
The MMBT5401-G is a high-performance device that operates over a wide range of electrical and environmental conditions, making it an excellent choice for applications requiring reliable operation over extended periods of time. Its low power consumption and low leakage current make it an ideal choice for applications where power efficiency is critical. Additionally, the MMBT5401-G is widely available and relatively inexpensive, making it a cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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