Allicdata Part #: | MMBT6427LT3-ND |
Manufacturer Part#: |
MMBT6427LT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 40V 0.5A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 40V 500m... |
DataSheet: | MMBT6427LT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 500µA, 500mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20000 @ 100mA, 5V |
Power - Max: | 225mW |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBT6427 |
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Transistors, namely semiconductor controlled switches, are considered one of the most widely used electronic components. Among the different types, the Bipolar Junction Transistor (BJT) is widely employed on different applications, including the MMBT6427LT3, which is a single transistor. The main advantages of this transistor are its high speed switching, its low power of activation, and its minimal size.
The MMBT6427LT3 is a low-power N-P-N BJT; the Amplification Factor (Beta) of this device is up to approximately 225, which is the measure of the difference between the collector current and the base current. This transitor is especially designed to have a low saturation voltage of 0.2Volts, which, in combination with its high beta, makes it ideal for high voltage switching applications. At the same time, the transistor has a collector-emitter breakdown voltage rating of 40 Volts, making it suitable for a wide range of applications.
When explaining the working principle of the MMBT6427LT3, it is important to consider the main parameters of the device. These are the collector-emitter voltage (Vce), the collector current (Ic), and the base current (Ib). Essentially, the transistor structures two back-to-back pn-junctions, which are connected together to form what is known as the base-emitter junction. When a small current is applied to the base-emitter junction, this current is multiplied and amplified as it moves from the transistor’s collector to the emitter.
In addition to the BJT’s main application, which is switching, these devices can also be used for amplification of signals. This is accomplished by bringing the appropriate biasing voltage to the base to make the output current much larger than the input current. When applied as an amplifier, the base current must be relatively small to generate a larger output current. At the same time, the BJT is able to act as an attenuator in the reverse direction. Therefore, the MMBT6427LT3 can be used in a wide variety of applications requiring both switching and signal processing.
Whether used as a switch or as an amplifier, the MMBT6427LT3 offers a range of advantages, such as its small size, high speed switching, minimal power consumption, and its wide voltage range. This flexibility means that the device is usable in a huge variety of applications, ranging from automotive electronics to consumer products. It is also an ideal choice for driving digital logic interfaces, especially when a small signal voltage is needed to make a high gain.
In summary, the MMBT6427LT3 is a single BJT that offers a wide range of applications and solutions. Its low power consumption and its small size makes it ideal for applications where space and power consumption are of utmost concern. Meanwhile its high switching speed and its relatively high amplification factor makes it very suitable for signal processing applications. All these characteristics, combined with its wide voltage range and wide operating temperature range, make the MMBT6427LT3 an ideal choice for a variety of electronics.
The specific data is subject to PDF, and the above content is for reference
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