Allicdata Part #: | MMBT6428LT1GOSTR-ND |
Manufacturer Part#: |
MMBT6428LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.2A SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 200mA 700MHz 225m... |
DataSheet: | MMBT6428LT1G Datasheet/PDF |
Quantity: | 321000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 100µA, 5V |
Power - Max: | 225mW |
Frequency - Transition: | 700MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBT6428 |
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MMBT6428LT1G is a type of Transistors - Bipolar (BJT) - Single. It is a medium current device that features excellent on-resistance and high speed operation. It also has a wide range of applications such as power switching and motor control. It is a complementary NPN/PNP transistor pair with a fast switching time. The MMBT6428LT1G is designed for use in applications such as switching, logic, LVDS, and power management.
The MMBT6428LT1G is a low-voltage, low-power, NPN/PNP Bipolar Junction Transistor (BJT). It has a collector-emitter voltage of up to 40V and a maximum continuous collector current of 200mA. The MMBT6428LT1G is offered in a three-lead plastic TO-92 package. This package is small and cost-effective and is suitable for automated assembly. The device’s small size and high on-resistance make it an excellent choice for space-constrained application designs and low-power circuit designs.
An important factor to consider when using the MMBT6428LT1G is its parasitic capacitances. The device has two parasitic capacitances: a common-base and a common-emitter capacitance. The common-base capacitance is the portion of the device\'s total capacitance that exists between the base and the collector of the transistor. The common-emitter capacitance is the portion of the device\'s total capacitance that exists between the emitter and the collector of the transistor. These parasitic capacitances are important to consider when designing a circuit as they will affect the speed of the transistor and the power efficiency and performance of the circuit.
The working principle of the MMBT6428LT1G is similar to that of other transistor types. It works by controlling current flow through the device in response to a base input signal. When a small base current is applied, a much larger current will flow from the collector to the emitter of the transistor. This current flow can be used to switch loads and control circuits. The device can also be used to amplify signals in both amplifier circuits and switching circuits.
The MMBT6428LT1G is highly versatile and can be used in a variety of applications. It is well suited for use in power switching, logic, and motor control circuits. It can also be used in switching mode power supplies (SMPS), logic level conversion, and as a voltage regulator. In automotive applications, the device can be used in pneumatic and hydraulic control systems, and in audio amplifiers.
The MMBT6428LT1G is a popular and widely used transistor that offers excellent performance and reliability. Its features and applications make it an excellent choice for designers looking to build efficient and cost-effective circuits. The device’s small size also makes it suitable for use in confined spaces.
The specific data is subject to PDF, and the above content is for reference
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