MMBT6520LT1G Allicdata Electronics
Allicdata Part #:

MMBT6520LT1GOSTR-ND

Manufacturer Part#:

MMBT6520LT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 350V 0.5A SOT23
More Detail: Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 225...
DataSheet: MMBT6520LT1G datasheetMMBT6520LT1G Datasheet/PDF
Quantity: 9000
Stock 9000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Power - Max: 225mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBT6520
Description

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The MMBT6520LT1G is a small signal PNP transistor. It belongs to the family of Bipolar Junction Transistors (BJT) which are also known as “Current Regulating Transistors” or “Current Amplifier Transistors”.

It is commonly found in many applications such as audio amplifiers, switching applications, voltage regulators, and various other circuits. Its small size, low cost and good performance makes it a popular choice for these applications.

The MMBT6520LT1G transistor is built using PNP technology which is an abbreviation for Positive Negative Positive. This technology makes it easier for manufacturers to produce and more reliable for users. PNP transistors are also known as “current amplifying transistor” because they can increase the amount of current being moved from one component to another component.

The MMBT6520LT1G has three different terminals called Emitter, Base, and Collector. The Emitter and collector terminals are used to control the current flowing through the transistor. The Base terminal is used to control the voltage on the emitter and collector pins to achieve a desired level of current.

The working principle of the MMBT6520LT1G is based on the fact that when a voltage is applied to the Base terminal, it creates an electric field across the Base-Emitter junction. This electric field changes the current that can flow through the Barrrier of the transistor, resulting in an increase or decrease in current associated with the voltage applied to the Base terminal.

When a small current flow through the base terminal, it opens the transistor, thus allowing a larger current to flow from the Emitter to Collector. When the current flow through the Base terminal is reduced, the transistor closes, thus limiting the current that can flow through the circuit. This is how the transistor amplifies the current.

The MMBT6520LT1G can be used in many different applications, such as audio amplifiers, voltage regulators, switching applications, and more. It can be used in low-power applications such as mic pre-amplifiers and telephone circuits. It can also be used in high-power applications such as audio amplifiers, motors, and RF amplifiers.

Overall, the MMBT6520LT1G transistor is a small signal PNP transistor. It is known for its small size, low cost, and good performance. It is commonly found in many different applications such as audio amplifiers, voltage regulators, and switching applications. Its working principle is based on the fact that it can be used to control current flow by applying a voltage to the Base terminal.

The specific data is subject to PDF, and the above content is for reference

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