Allicdata Part #: | MMBTA20LT1G-ND |
Manufacturer Part#: |
MMBTA20LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 100mA 125MHz 225m... |
DataSheet: | MMBTA20LT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 5mA, 10V |
Power - Max: | 225mW |
Frequency - Transition: | 125MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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MMBTA20LT1G Application Field and Working Principle
The MMBTA20LT1G is a high-efficiency and high-power bipolar (BJT) single transistor, which is commonly used for motor control and power regulation applications. It is particularly suited for applications requiring very fast switching times due to its advanced construction and operating characteristics.
Overview
The MMBTA20LT1G is a high-efficiency and high-power bipolar (BJT) single transistor, manufactured with a thin oxide-gate process. It is available in three different breakdown voltages: 350V, 400V, and 500V. It is also equipped with a built-in 30-amp gate driver and can operate at frequencies up to 1 GHz. Its high-speed switching times allow it to achieve very efficient power regulation and low power losses.
Features and Benefits
- High efficiency and high power
- Thin oxide-gate process
- Available in three different breakdown voltages
- Built-in 30-amp gate driver
- Operates at frequencies up to 1 GHz
- High-speed switching times for efficient power regulation and low power losses
Applications
The MMBTA20LT1G is ideal for motor control and power regulation applications due to its high-efficiency, high-power, and fast switching times characteristics. It is suitable for applications such as motor speed controllers, AC/DC power converters, and DC/DC switching power supplies. Additionally, it can also be used in automotive, industrial, and telecom switching power supply applications as well.
Working Principle
The working principle of the MMBTA20LT1G is based on the bipolar junction transistor (BJT) principle. It is composed of three layers: an emitter, a base and a collector. In the BJT principle, a voltage applied across the emitter base junction will change the number of electrons available in the base and consequently affect the current passing through the emitter-collector junction. Therefore, with this principle, the MMBTA20LT1G can control and regulate the power passing through it.
Conclusion
The MMBTA20LT1G is a high-efficiency and high-power bipolar (BJT) single transistor, which is commonly used for motor control and power regulation applications. It is also equipped with a built-in 30-amp gate driver, which allows it to operate at frequencies up to 1 GHz and achieve fast switching times. Additionally, it can be used in applications such as motor speed controllers, AC/DC power converters, and DC/DC switching power supplies.
The specific data is subject to PDF, and the above content is for reference
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