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Transistors - Bipolar (BJT) - Single

MMBT43LT1G is a NPN transistor for use in general purpose amplification and switching applications. It is built in a tiny plastic SOT-23 package, making it ideal for compact devices where size is important.

Application fields

The MMBT43LT1G can be used in a broad range of applications, such as amplifiers, switch circuits, and high current switching applications. It can also be used in motor controls and other high power applications. The transistor is also suitable for use in noise suppression, voltage regulators, and other low power circuits.

Working principle

The MMBT43LT1G is an NPN transistor, meaning it can switch on and off a current flow between two of its three electrodes, the Base, Collector and Emitter. It works when a current passes through the Base and activates the transistor to switch a larger current through the Collector and Emitter, from the Collector to the Emitter. This current can then be used to control a larger circuit, for example switching on and off an amplifier.

The Base-Emitter voltage of the MMBT43LT1G is 0.6V, and the forward current gain (hFE) is from 60 to 300. The Collector-Emitter voltage is 40V, and the power dissipation is 250mW. The circuits maximum junction temperature is 175 degrees Celsius.

Conclusion

In conclusion, the MMBT43LT1G NPN transistor is a versatile, small-format transistor with a variety of applications in amplification, noise suppression, voltage regulators and motor controls. Its Base-Emitter voltage of 0.6V, current gain range of 60-300, and Collector-Emitter voltage of 40V make it ideal for use in compact devices, while its maximum junction temperature of 175 degrees Celsius make it suitable for high power applications.

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