| Allicdata Part #: | 1465-1157-ND |
| Manufacturer Part#: |
MRF157 |
| Price: | $ 356.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | M/A-Com Technology Solutions |
| Short Description: | FET RF 125V 80MHZ 368-03 1=1PC |
| More Detail: | RF Mosfet N-Channel 50V 800mA 80MHz 21dB 600W 368-... |
| DataSheet: |  MRF157 Datasheet/PDF |
| Quantity: | 15 |
| 1 +: | $ 323.65000 |
| 10 +: | $ 311.66200 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Transistor Type: | N-Channel |
| Frequency: | 80MHz |
| Gain: | 21dB |
| Voltage - Test: | 50V |
| Current Rating: | 60A |
| Noise Figure: | -- |
| Current - Test: | 800mA |
| Power - Output: | 600W |
| Voltage - Rated: | 125V |
| Package / Case: | 368-03 |
| Supplier Device Package: | 368-03, Style 2 |
Description
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MRF157 is a RF power field-effect transistor (FET) designed for radio frequency (RF) power amplifiers in the VHF band. It is especially suited for modulation, frequency doubling, and linear applications. MRF157 is a high-power, N-channel RF FET, fabricated with a double-diffused, pre-biased, short-channel Trench MOSFET process. It has a wide range of operating temperature and operating voltage.Overview of Operating PrincipleMRF157 is a field-effect or MOSFET transistor that works in the radio frequency range. It is made from a wide variety of materials, including silicon, gallium arsenide, and indium phosphide. The device has a gate, source, and drain. A gate voltage is applied to the gate terminal, which enables or turns on the current that travels from the source to the drain.The principle of operation for the MRF157 device is based on two important concepts: pinch-off and channel modulation.Pinch-off occurs when the gate voltage exceeds the threshold voltage, allowing the channel to be completely pinched off. This prevents current flow and the device to operate in its “off” state. Once the gate voltage drops below the threshold voltage, a “depletion region” is formed within the channel, allowing current to flow.Channel modulation occurs when the gate-source voltage is increased beyond the pinch-off voltage. This will cause the channel to become thinner, increasing the drain-source voltage and allowing more current to flow. As the gate-source voltage is decreased, the channel widens and the device again operates in its “off” state.Applications of MRF157MRF157 is primarily used in radio frequency power amplifiers for VHF applications. Its powerful switching capabilities make it an ideal choice for high-power applications such as linear power amplifiers and frequency doubling applications.The device is used for such applications as aircraft communications, radar, navigation and command systems, amateur radio, marine communications, marine navigation and control systems, and cellular radio systems.ConclusionThe MRF157 is an N-channel RF FET power transistor designed for radio frequency power amplifiers in the VHF band. It utilizes the principles of pinch-off and channel modulation, and is ideal for high-power applications such as linear power amplifiers and frequency doubling. It finds application in numerous VHF systems such as aircraft communications, amateur radio, marine communications, and cellular radio systems.
The specific data is subject to PDF, and the above content is for reference
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