MRF160 Allicdata Electronics
Allicdata Part #:

1465-1159-ND

Manufacturer Part#:

MRF160

Price: $ 26.96
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: FET RF 65V 500MHZ 249-06
More Detail: RF Mosfet N-Channel 28V 50mA 30MHz ~ 500MHz 18dB 4...
DataSheet: MRF160 datasheetMRF160 Datasheet/PDF
Quantity: 60
1 +: $ 24.51330
10 +: $ 22.92070
25 +: $ 21.19820
100 +: $ 19.87340
250 +: $ 18.54850
Stock 60Can Ship Immediately
$ 26.96
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: N-Channel
Frequency: 30MHz ~ 500MHz
Gain: 18dB
Voltage - Test: 28V
Current Rating: 1A
Noise Figure: --
Current - Test: 50mA
Power - Output: 4W
Voltage - Rated: 65V
Package / Case: 249-06
Supplier Device Package: 249-06, Style 3
Description

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The MRF160 is a member of the RF power MOSFET family from Motorola. The device family is designed to provide reliable performance from HF to UHF frequencies, making them suitable for a wide range of applications. This article provides an overview of the MRF160\'s application field and working principle, and serves to illustrate how such components are used.

What is the MRF160?

The MRF160 is a power MOSFET transistor designed for use in high-power radio frequencies. It is used in many types of radio transmission applications and can be found in cellular base stations, mobile communication systems, radar systems, and military communications. The device is capable of providing a high power gain and low power dissipation, making it a desirable choice in most RF systems.

Application Field of MRF160

The MRF160 is an ideal choice for use in high-power radio frequency systems, as its low power consumption makes it a suitable choice for long-term operation. It is also capable of delivering high power gains, allowing for greater transmission distances or power efficiency. Furthermore, the MRF160 has a low-noise level and can be used in systems requiring low-noise operation such as those used in medical imaging, military communications, or other sensitive systems. Additionally, the device is suitable for use in high-altitude projects, as it is designed to operate in environments with temperatures of up to 150°C.

Working Principle

The working principle of the MRF160 is different compared with traditional bipolar transistors. Instead of the base-emitter junction, the MOSFET uses a single-gate terminal that is connected to the drain and source terminal, allowing the device to be operated in either the enhancement or depletion modes. In the enhancement mode, a current will flow between the drain and source as long as a bias voltage is applied to the gate. In the depletion mode, a current will flow between the drain and source as long as the bias voltage applied to the gate is greater than the drain-source voltage. This type of operation results in higher frequency operation than a traditional transistor and makes the MRF160 a suitable choice for many RF applications.

Conclusion

The MRF160 is a great choice for use in high-power radio frequency systems due to its ability to provide reliable performance and low power consumption. Its single-gate terminal also enables it to operate at higher frequencies than traditional transistors and make it a suitable choice for many RF applications. Whether used in a cellular base station, mobile communication system, radar system, or military communications, the MRF160 is sure to provide reliable performance and help meet the requirements of any project.

The specific data is subject to PDF, and the above content is for reference

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