MRF18085BLR3

MRF18085BLR3 is an enhancement mode, silicon N-Channel depletion enhancement MOSFET available in small outline type packaging technology. It is mainly used in RF amplifier applications especially for HF and VHF broadcast transmitting applications where drain efficiency and size are important parameters for the design.This MOSFET is manufactured in advanced process which results in stable RF performance and tight RF gain matching parameters.

Application Field

MRF18085BLR3 is an RF power MOSFET transistor with a gate leakage current of 9nA. Its small outline package makes it suitable for power amplifiers in Automotive and Industrial applications. It can be used in various applications such as:

• Mobile downlink amplifiers
• High power amplifiers in VHF and UHF
• Broadcasting amplifiers
• Cable Television amplifiers
• Automotive tier-one value chain solutions
• Bandwidth and capacity augmentations

Working Principle

The basic working principle of the MRF18085BLR3 MOSFET is similar to any ordinary MOSFET. It is a voltage-controlled device which has an insulated gate whose main purpose is to control the flow of electrical current in the MOSFET. The insulated gate is created by negative feedback, where the gate-source voltage is compared to a fixed voltage. When the gate-source voltage is higher than the fixed voltage, electrons will start to flow from the source to the drain and the MOSFET will start to conduct.

The MRF18085BLR3 MOSFET has a drain-source breakdown voltage of 20 V, a drain-source on resistance of 6.7, a peak drain current of 175 mA, and a gate threshold voltage of -2.0 V. These parameters have been optimized for use in RF amplifier applications. Additionally, the MOSFET has a fast switching time, making it suitable for high-speed modulation and demodulation circuits.

The MRF18085BLR3 MOSFET has been designed using advanced process technologies, which results in higher figures of merit and better RF performance. This, combined with its small size, make it ideal for use in RF amplifier applications. Additionally, the MOSFET has proven to be suitable for power amplifiers in automotive and industrial applications.