MRF141G Allicdata Electronics
Allicdata Part #:

1465-1150-ND

Manufacturer Part#:

MRF141G

Price: $ 126.57
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: FET RF 2CH 65V 175MHZ 375-04
More Detail: RF Mosfet 2 N-Channel (Dual) Common Source 28V 500...
DataSheet: MRF141G datasheetMRF141G Datasheet/PDF
Quantity: 20
1 +: $ 115.06300
10 +: $ 109.51000
25 +: $ 105.54200
Stock 20Can Ship Immediately
$ 126.57
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: 2 N-Channel (Dual) Common Source
Frequency: 175MHz
Gain: 14dB
Voltage - Test: 28V
Current Rating: 32A
Noise Figure: --
Current - Test: 500mA
Power - Output: 300W
Voltage - Rated: 65V
Package / Case: 375-04
Supplier Device Package: 375-04, Style 2
Description

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MRF141G is a type of high power field effect transistor (FET). It belongs to a class of FETs known as radio frequency (RF) transistors, which are designed for radiofrequency (RF) amplification applications. The MRF141G is a silicon device that functions as an RF amplifier and operates between 20MHz and 1000MHz. It is suitable for use in many different types of RF applications including wireless communication systems, high frequency digital circuits, radar systems, and other RF devices.

The MRF141G is a common-source FET designed specifically for high-power, high-frequency applications. It is capable of handling large amounts of power at frequencies up to 1000MHz. It is designed with silicon epitaxial junction isolation technology, which reduces on-resistance, gate-source capacitance and drain-source capacitance. This makes the MRF141G ideal for use in mobile communication systems, as its high efficiency and low switching losses make it an ideal power amplifier for high frequency applications.

The MRF141G has a maximum Power Gain of 17dB and a maximum Operating Frequency of 1000MHz. It has an impedance match of 50 ohms and an input power of 10 watts. It has a low noise figure of 1.3dB and a maximum drain-source voltage of 40 Volts. The gate has a maximum gate-source voltage of ±20 Volts and can handle peak power up to 25 dBm. It is capable of handling high peaks of current, making it suitable for all types of linear and pulsed applications.

The MRF141G works on the principle of drain-to-source voltage, which is applied between the drain and source terminals. This voltage controls the current flowing between the drain and source terminals, which are typically connected to an RF signal source. The RF signal source produces an AC voltage, which is alternately applied between the drain and source terminals. The applied voltage is also responsible for creating a voltage variation between the gate and source terminal, which modulates the current flowing between the drain and source terminals. The modulation of current between the drain and source terminals is responsible for producing the desired RF power amplification.

The MRF141G can be used for high power applications such as RF transmitters, radio communication links, base stations, antenna relays, HF transmitters, and many other applications that require high frequency, high power amplification. It is a reliable, high performance transistor that can be used in conjunction with other active components to create an effective, efficient RF circuit. The MRF141G is an ideal choice for RF applications that require high power and efficiency in a wide range of frequencies.

The specific data is subject to PDF, and the above content is for reference

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