Allicdata Part #: | 1465-1150-ND |
Manufacturer Part#: |
MRF141G |
Price: | $ 126.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | FET RF 2CH 65V 175MHZ 375-04 |
More Detail: | RF Mosfet 2 N-Channel (Dual) Common Source 28V 500... |
DataSheet: | MRF141G Datasheet/PDF |
Quantity: | 20 |
1 +: | $ 115.06300 |
10 +: | $ 109.51000 |
25 +: | $ 105.54200 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | 2 N-Channel (Dual) Common Source |
Frequency: | 175MHz |
Gain: | 14dB |
Voltage - Test: | 28V |
Current Rating: | 32A |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 300W |
Voltage - Rated: | 65V |
Package / Case: | 375-04 |
Supplier Device Package: | 375-04, Style 2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MRF141G is a type of high power field effect transistor (FET). It belongs to a class of FETs known as radio frequency (RF) transistors, which are designed for radiofrequency (RF) amplification applications. The MRF141G is a silicon device that functions as an RF amplifier and operates between 20MHz and 1000MHz. It is suitable for use in many different types of RF applications including wireless communication systems, high frequency digital circuits, radar systems, and other RF devices.
The MRF141G is a common-source FET designed specifically for high-power, high-frequency applications. It is capable of handling large amounts of power at frequencies up to 1000MHz. It is designed with silicon epitaxial junction isolation technology, which reduces on-resistance, gate-source capacitance and drain-source capacitance. This makes the MRF141G ideal for use in mobile communication systems, as its high efficiency and low switching losses make it an ideal power amplifier for high frequency applications.
The MRF141G has a maximum Power Gain of 17dB and a maximum Operating Frequency of 1000MHz. It has an impedance match of 50 ohms and an input power of 10 watts. It has a low noise figure of 1.3dB and a maximum drain-source voltage of 40 Volts. The gate has a maximum gate-source voltage of ±20 Volts and can handle peak power up to 25 dBm. It is capable of handling high peaks of current, making it suitable for all types of linear and pulsed applications.
The MRF141G works on the principle of drain-to-source voltage, which is applied between the drain and source terminals. This voltage controls the current flowing between the drain and source terminals, which are typically connected to an RF signal source. The RF signal source produces an AC voltage, which is alternately applied between the drain and source terminals. The applied voltage is also responsible for creating a voltage variation between the gate and source terminal, which modulates the current flowing between the drain and source terminals. The modulation of current between the drain and source terminals is responsible for producing the desired RF power amplification.
The MRF141G can be used for high power applications such as RF transmitters, radio communication links, base stations, antenna relays, HF transmitters, and many other applications that require high frequency, high power amplification. It is a reliable, high performance transistor that can be used in conjunction with other active components to create an effective, efficient RF circuit. The MRF141G is an ideal choice for RF applications that require high power and efficiency in a wide range of frequencies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MRF1.6/5.6-BCUPA | Hirose Elect... | 24.54 $ | 1000 | CONN ADAPT PLUG-PLUG MRF1... |
MRF1.6/5.6-LPJ-179U | Hirose Elect... | 0.0 $ | 1000 | CONN 1.6/5.6 JCK R/A 75OH... |
MRF1.6/5.6-AP-59U | Hirose Elect... | 0.0 $ | 1000 | CONN 1.6/5.6 PLG STR 75OH... |
MRF1.6/5.6-LR-PC-1(40) | Hirose Elect... | 11.3 $ | 10 | CONN 1.6/5.6 RCPT R/A 75 ... |
MRF1.6/5.6-PJ-59U | Hirose Elect... | 14.05 $ | 1000 | CONN 1.6/5.6 JCK STR 75OH... |
MRF1.6/5.6-PJ-179U | Hirose Elect... | 14.05 $ | 1000 | CONN 1.6/5.6 JCK STR 75OH... |
MRF1.6/5.6-LR-PC-1 | Hirose Elect... | 14.71 $ | 1000 | CONN 1.6/5.6 RCPT R/A 75 ... |
MRF1.6/5.6-AP-2.5C | Hirose Elect... | 14.82 $ | 1000 | CONN 1.6/5.6 PLG STR 75OH... |
MRF1.6/5.6-PJ-2.5C | Hirose Elect... | 15.46 $ | 1000 | CONN 1.6/5.6 JCK STR 75OH... |
MRF1550NT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 40V 175MHZ TO272-6... |
MRF1513NT1 | NXP USA Inc | 4.07 $ | 3000 | FET RF 40V 520MHZ PLD-1.5... |
MRF1517NT1 | NXP USA Inc | -- | 9000 | FET RF 25V 520MHZ PLD-1.5... |
MRF136 | M/A-Com Tech... | -- | 740 | FET RF 65V 400MHZ 211-07R... |
MRF151A | M/A-Com Tech... | 66.38 $ | 59 | FET RF N-CH 50V 150W P-24... |
MRF14-4J-CH | Hirose Elect... | 11.13 $ | 15 | CONN COAX 4POS JACK4 Posi... |
MRF14-4P-CH | Hirose Elect... | 11.13 $ | 14 | CONN COAX 4POS PLUG4 Posi... |
MRF1518NT1 | NXP USA Inc | 4.68 $ | 1000 | FET RF 40V 520MHZ PLD-1.5... |
MRF1511NT1 | NXP USA Inc | 4.64 $ | 1000 | FET RF 40V 175MHZ PLD-1.5... |
MRF1535FNT1 | NXP USA Inc | 13.17 $ | 1000 | FET RF 40V 520MHZ TO272-6... |
MRF1535NT1 | NXP USA Inc | 13.17 $ | 1000 | FET RF 40V 520MHZ TO272-6... |
MRF1K50NR5 | NXP USA Inc | 108.26 $ | 1000 | WIDEBAND RF POWER LDMOS T... |
MRF1K50GNR5 | NXP USA Inc | 109.48 $ | 1000 | WIDEBAND RF POWER LDMOS T... |
MRF1K50HR5 | NXP USA Inc | 130.46 $ | 1000 | HIGH POWER RF TRANSISTORR... |
MRF13750HR5 | NXP USA Inc | 199.07 $ | 50 | RF POWER LDMOS TRANSISTOR... |
MRF157 | M/A-Com Tech... | 356.01 $ | 15 | FET RF 125V 80MHZ 368-03 ... |
MRF160 | M/A-Com Tech... | 26.96 $ | 60 | FET RF 65V 500MHZ 249-06R... |
MRF171A | M/A-Com Tech... | -- | 53 | FET RF 65V 200MHZ 211-07R... |
MRF166C | M/A-Com Tech... | 35.0 $ | 33 | FET RF 65V 500MHZ 319-07R... |
MRF141G | M/A-Com Tech... | 126.57 $ | 20 | FET RF 2CH 65V 175MHZ 375... |
MRF154 | M/A-Com Tech... | 350.41 $ | 8 | FET RF 125V 100MHZ 368-03... |
MRF174 | M/A-Com Tech... | 35.88 $ | 92 | FET RF 65V 150MHZ 211-11R... |
MRF175LU | M/A-Com Tech... | 52.6 $ | 11 | FET RF 65V 400MHZ 333-04R... |
MRF140 | M/A-Com Tech... | 55.01 $ | 19 | FET RF 65V 150MHZ 211-11R... |
MRF166W | M/A-Com Tech... | 66.66 $ | 9 | FET RF 2CH 65V 500MHZ 412... |
MRF176GV | M/A-Com Tech... | 90.69 $ | 5 | FET RF 2CH 125V 225MHZ 37... |
MRF137 | M/A-Com Tech... | 30.18 $ | 1000 | FET RF 65V 400MHZ 211-07R... |
MRF1570FNT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 40V 470MHZ TO272-8... |
MRF176GU | M/A-Com Tech... | 98.74 $ | 1 | FET RF 2CH 125V 225MHZ 37... |
MRF1K50H-TF3 | NXP USA Inc | 0.69 $ | 5 | MRF1K50H 81.36 MHZ EVAL B... |
MRF10031 | M/A-Com Tech... | 92.88 $ | 10 | TRANS NPN 30W 960MHZ-1215... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...