MRF174 Allicdata Electronics
Allicdata Part #:

1465-1166-ND

Manufacturer Part#:

MRF174

Price: $ 35.88
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: FET RF 65V 150MHZ 211-11
More Detail: RF Mosfet N-Channel 28V 2A 150MHz 11.8dB 125W 211-...
DataSheet: MRF174 datasheetMRF174 Datasheet/PDF
Quantity: 92
1 +: $ 32.62140
10 +: $ 30.70370
25 +: $ 28.78470
100 +: $ 27.44140
Stock 92Can Ship Immediately
$ 35.88
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: N-Channel
Frequency: 150MHz
Gain: 11.8dB
Voltage - Test: 28V
Current Rating: 13A
Noise Figure: 3dB
Current - Test: 2A
Power - Output: 125W
Voltage - Rated: 65V
Package / Case: 211-11, Style 2
Supplier Device Package: 211-11, Style 2
Description

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The MPF174 (MRF174) is a popular single-gate MOSFET designed primarily for RF amplification and signal switching applications. This device is part of what is known as the modern transistor family of field-effect transistors (FETs) that are designed using today\'s advanced semiconductor processing technologies. The device characteristics of the MRF174, as well as its operating principle, make it especially suitable for high power applications in the wireless communication industry, including cellular telecommunications, wireless LAN, microwave point-to-point communications, and high-power broadcast transmissions.

The MRF174 is unique among FETs due to its single-gate construction. This allows for a simplified construction process, which in turn helps to keep fabrication costs down. Additionally, the single-gate design also allows for better thermal performance. The MRF174 is capable of handling power levels up to 200 watts, making it an ideal choice for its intended applications.

The MRF174 operates on the same basic principles as other FETs. When a DC voltage is applied to the gate terminal, it controls the flow of electrons through the channel, which is formed between the source and drain regions. The MRF174 is designed to work with a maximum gate-to-source voltage of 20 V. As the voltage is increased, the current flow increases linearly up to a certain point, known as the source-to-drain saturation point.

The MRF174 is also designed to be easy to use in applications requiring pulse mode operation. This is due to a special feature known as the source “breakdown” voltage. This voltage determines the level at which the FET will turn off when it is driven in pulsed mode. As a result, the device can be easily used in applications where short pulses of high power are required.

The MRF174 also offers advantages in terms of its compact size. This makes it perfect for use in space-constrained applications, such as cellular base station antennas, military radar systems, and satellite communications systems. The device can also be easily packaged into module form, which further simplifies the process of RF integration within any given system.

Finally, the MRF174 is a rugged, reliable device. It is designed to perform consistently at temperatures as low as - 55°C and as high as + 155°C. This means that the device can be used in extreme environments without suffering any significant degradation in performance.

In summary, the MRF174 is an ideal choice for RF applications requiring high power levels, reliable operation, and compact size. Its single-gate design, pulse mode operation, and robust design make it an excellent choice for wireless communications systems.

The specific data is subject to PDF, and the above content is for reference

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