MRF5812G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	2dB ~ 3dB @ 500MHz
Gain:	13dB ~ 15.5dB
Power - Max:	1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 50mA, 5V
Current - Collector (Ic) (Max):	200mA
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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The MRF5812G is a heavy-duty RF transistor specifically designed for microwave radios. It produces a maximum power output of 40-50 Watts up to a frequency of 2.5 GHz. This type of transistor is known as a NPN, or ‘negative polarity’, RF transistor and is part of a family of transistors called Bipolar Junction Transistors (BJT). BJT’s have an interesting and complex working principle, but to simplify, they work by allowing a controlled amount of current to pass through a base-like structure when voltage is applied.The MRF5812G is well suited for high power linear applications, such as amplifiers used in aviation and communication systems. This particular transistor has superior gain and efficiency, making it highly efficient in its operation. Its small size of 320x740x310mm and requisite base-to-collector distance of 0.37mm also make it suitable for use in a number of different environments.The key features of the MRF5812G make it a very attractive solution for microwave radio applications in which there is a need for high power and efficiency levels. Its high power output, low thermal resistance, and wide frequency range allow it to thrive in such environments. Additionally, the transistor’s extensive environmental tests mean that it can operate reliably in virtually any environment.The process of manufacturing the MRF5812G is highly complex and requires advanced equipment. The manufacturing process starts with the selection of the die which is then packaged into a plastic or ceramic housing. The die is then subjected to a series of tests including load, leakage and temperature cycling. It is then tested for gain, intermodulation performance, maximum power output, return loss, isolations and noise.Once the die has passed the testing stage, it is ready for use. The MRF5812G can be used as an amplifier in a number of different systems, including as part of an L-band radio system. In such applications, the transistor is typically mounted onto a metal heatsink. This helps to dissipate the heat generated by the transistor, thereby improving its reliability and performance.The MRF5812G is an extremely reliable and durable transistor, which has been used in a variety of applications, from military telecommunications to wi-fi communication systems. Thanks to its robust design and construction, it can operate at high frequencies with a maximum power output of 40-50 Watts. It is also very efficient in its operation and can be used in a number of different environments.To conclude, the MRF5812G is an excellent choice for radio frequencies between 0.5-2.5GHz and offers a power output of 40-50s Watts. Its advanced design, robust construction, and efficient operation make it a great choice for any application that requires high power and reliability levels. Its small size and wide frequency range also make it well suited for use in a variety of environments.

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