MRF5S9070MR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	880MHz
Gain:	17.8dB
Voltage - Test:	26V
Current Rating:	--
Noise Figure:	--
Current - Test:	600mA
Power - Output:	14W
Voltage - Rated:	68V
Package / Case:	TO-270-2
Supplier Device Package:	TO-270-2

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The MRF5S9070MR1 is a high-power, high-frequency, silicon, N-channel, and radio frequency (RF) metal oxide semiconductor field-effect transistor (MOSFET). It\'s a common power transistor used by many radio frequency applications, including radar, industrial, and communication systems. It is mainly used for amplification purposes and is preferred in medium-power and high-power amplifiers required for driving various types of antennas and loads.The equivalent on-state resistance of this transistor is low, thereby enabling it to deliver high current and power efficiently. The transistor can handle a continuous drain-source voltage of up to 200 volts and a maximum drain current of up to 30 amperes. The on-state resistance is also not affected by the ambient temperature conditions, meaning that the transistor does not require additional elements to regulate the power.The MRFS9070MR1 has a small thermal resistance, resulting in enhanced heat sinking capability, which increases its reliability. This feature also eliminates the necessity for extra heat sinks. The superior thermal performance of the transistor also makes it suitable for high-frequency applications, allowing it to handle extreme thermal loadings.The L-band frequency of the MRF5S9070MR1 is between 400 to 900MHz, and the RF power can be up to 500W. This feature makes the transistor suitable for a wide range of applications, such as satellite communication systems, long-distance wireless links, and base station applications.In addition, the transistor\'s stability and uniformity make it an attractive option for high-power RF applications. Its superior noise figure ensures that it delivers low-noise performance, while its linearity ensures that it can work with wideband signals. The transistor also offers high gain and linearity, which makes it suitable for power amplifiers and applications featuring high frequencies.The structure and working principle of the MRF5S9070MR1 is quite straightforward. The MOSFET is a voltage-controlled transistor that uses an insulated gate to modulate the flow of a current between a source and a drain. As such, the transistor works by allowing electric charge to pass through it when a gate voltage is applied to the gate electrode. The current flow is proportional to the gate voltage and is regulated by the gate voltage.The MRF5S9070MR1 is well-suited for use in high-power RF application due to its small thermal resistance, low on-state resistance, high drain current, and high linearity. This transistor has a wide range of applications and is an ideal choice for high-power RF amplifiers which require high current, power efficiency, and reliability.

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