MRF5S19090HSR5

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Introduction

The MRF5S19090HSR5 is a RF MOSFET designed for use in high power applications. It is a common type of voltage regulator, featuring a channel type structure with a size of 4.8mm x 4.0mm. The transistor features an extremely low on-resistance and high breakdown voltage, making it suitable for use in RF amplifiers, as well as a range of other high power applications.

Application Field

The MRF5S19090HSR5 is designed for use in applications requiring high power levels, such as radio frequency (RF) power amplifiers and power converters. It is also used in low noise amplifiers, in which low noise levels and dynamic range are necessary. Additionally, it is commonly used in industrial and automotive applications.

The MRF5S19090HSR5 is also suitable for use in FM radio stations, where high power RF amplifiers are necessary to broadcast signals over a large area. It is also used in critical applications, as it is capable of withstanding high voltages and has an extremely low on-resistance, allowing for high efficiency and long life.

Working Principle

The MRF5S19090HSR5 is a voltage regulator designed for use in high power applications. It works by controlling the flow of current between the source and the drain. When voltage is applied to the gate, the current flows from source to drain, and when the voltage is removed, the current stops flowing. This allows the device to regulate the current in the circuit, making it suitable for use in DC-DC converters and RF power amplifiers.

The MRF5S19090HSR5 is also capable of withstand high voltages, up to 175V, which makes it suitable for use in high voltage applications such as in automotive and industrial applications. The low on-resistance of the transistor ensures high efficiency, improved system linearity and lower power loss.

Conclusion

The MRF5S19090HSR5 is a RF MOSFET designed for use in high power applications. It is a voltage regulator with a channel type structure, featuring an extremely low on-resistance and high breakdown voltage. It is suitable for use in RF amplifiers, low noise amplifiers, FM radio stations, DC-DC converters and critical applications. The transistor is able to withstand high voltages and has a low on-resistance for improved system linearity and efficiency.

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