MRF5S21090HR5

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The MRF5S21090HR5 is a high-power, high-frequency FET (field effect transistor) operating in a class AB linear amplifier design. It is designed to amplifier RF (Radio Frequency) signals between 8-20 GHz, making it suitable for a variety of applications including RADARs. This device can provide maximum power output of 36W with a supply voltage of 24V, making it very versatile in its use cases. Additionally, this device can operate in a wide range of temperatures, from -55 to +125°C.

The MRF5S21090HR5 is an enhancement-mode MOSFET (metal-oxide-semiconductor field-effect transistor) with a N-channel design. All MOSFETs are composed of a source, gate and drain, with the source being connected to the negative power supply, the gate being the control electrode for the amount of current that passes between the source and the drain and the drain connected to the positive power supply. The enhancement-mode MOSFET is a type of device that has been optimized for high-speed switching operations and has high resistance when the gate is not given a control voltage. The device’s N-channel design means that when the gate is given a positive input voltage the device is able to pass high amounts of current through, making it suitable for amplifying, switching, and communications applications.

The MRF5S21090HR5 operates in linear, class AB amplifier design. RF amplifiers are an essential part of most wireless communication systems as they are responsible for amplifying the desired signal while simultaneously suppressing noise. Class AB amplifiers are the most commonly used linear amplifiers and is the best compromise between linearity, efficiency and harmonic content. This means that if an RF signal is amplified by the MRF5S21090HR5, it will be able to achieve both accuracy and a high output power which makes the device very suitable for many RF applications.

The MRF5S21090HR5 is a great choice for amplifying, switching and communications applications between 8-20 GHz. The device can provide a 36W of output power and a high linearity, making it a great option for RADARs and other RF communication systems. Additionally, its ability to operate in a wide range of temperatures ensures that it works well in the most challenging of environments.

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