MRF5812MR1

The MRF5812MR1 is a commercial-grade, surface mount, bipolar NPN transistor from the RF series. It is characterized with industry-leading performance in terms of gain, input power, and bandwidth. This versatile device is suitable for a variety of applications, ranging from RF amplifiers and oscillators to key test measurements and low frequency TVs.

Application Field

The MRF5812MR1 is specifically designed for wideband signal amplifiers, oscillators and signal measurements. It can be used in both RF front-end signal amplification applications, such as TV receivers and mobile phones, and low frequency signal measurements, such as CB and FM radios. This device is also suitable for a wide range of applications such as power transistors, solid-state amplifiers and signal transmission. Due to its excellent performance parameters and robust packaging, the MRF5812MR1 is ideal for power amplifiers, low-frequency signal measurements and for a variety of other electronic and communication equipment.

Working Principle

The MRF5812MR1 operates using the two-terminal Ebers-Moll model described by the function, where Vc is the voltage across the collectors, Vbe is the voltage across the base-emitter, and IE is the Collector-Emitter current. It is a commercial-grade NPN transistor, specifically designed for wideband amplification applications operating from high frequency up to 3GHz. The device is capable of providing high gain, power and bandwidth for a variety of applications such as low-frequency signal measurements, power transistors and signal transmission.

The MRF5812MR1 is a three-terminal device with two input and one output terminals. It works by controlling the flow of electric current from the Collector to the Emitter, resulting in a signal amplification. In other words, this device is capable of receiving an electrical signal at input terminals, amplifying it and providing an amplified signal at the output terminal. The device has a maximum collector current of 30mA, a maximum DC collector current of 5mA, a maximum junction temperature of 175°C and a maximum collector-emitter voltage of 20V.

The MRF5812MR1 is also suitable for various thermal applications, featuring high thermal conductivity, thermal resistance and long-term stability. Its unique package design features a pre-mounted heat-sink and a copper base plate that together allows the device to dissipate heat quickly and avoid hot spots, thereby increasing the device’s reliability and durability. By reducing the temperature possible for the device, this device extends the transistor’s life-span and reduces its power consumption.

In summary, the MRF5812MR1 is a highly versatile NPN bipolar transistor, commonly used in RF amplifiers, oscillators, and low-frequency signal measurements. It is characterized with excellent gain, power, and bandwidth capabilities, making it suitable for a wide range of applications. With its advanced design and thermal management packages, the device ensures high performance and property reliability for an extended lifespan.