Allicdata Part #: | MRF553T-ND |
Manufacturer Part#: |
MRF553T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 16V 500MA POWERMACRO |
More Detail: | RF Transistor NPN 16V 500mA 175MHz 3W Surface Moun... |
DataSheet: | MRF553T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 16V |
Frequency - Transition: | 175MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 11.5dB |
Power - Max: | 3W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 250mA, 5V |
Current - Collector (Ic) (Max): | 500mA |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | Power Macro |
Supplier Device Package: | Power Macro |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF transistors facilitate the capacity to build high-frequency circuits that can switch signals quickly and efficiently. As such, they are an important part of any radio system. Among the wide range of RF transistor types available, MRF553T is a popular variant. As a basic understanding of all RF transistors, MRF553T application field and working principle can provide a comprehensive insight into its potential uses and applications.
MRF553T Application Field
The MRF553T transistor is often used as basic building blocks in radio unit designs, radio amplifiers, and other radio frequency equipment. In particular, it is often used as a local oscillator driver for its low noise gain, wide frequency range and stability. The linearity of the MRF553T transistor also lends itself to accuracy and quality in the design of these systems, making it an essential part of any sophisticated or high quality radio systems.
MRF553T transistors are also often used in high power applications that require strong output power such as base station amplifiers. Since these applications require reliable operation in the presence of high power, MRF553T transistors are often employed for best performance in this regard.
MRF553T Working Principle
The MRF553T operates in the same manner as traditional bipolar junction transistors (BJTs). Essentially, this type of transistor is constructed with three diodes connected in contrast to the typical two diodes of a bipolar junction transistor. This construction helps to reduce impedance while allowing for greater current capacity.
The three terminals of a BJT (the base, collector and emitter) are responsible for controlling the current flow. When a current is applied to the base terminal, electrons are attracted from the emitter and flow to the collector. This process of controlling the current is known as current gain and is the basis of transistor operation.
In the case of the MRF553T, the transistor’s operation is enhanced by having the three diodes. This reduction in impedance and increase in current capacity allows the transistor to be used in applications where traditional BJTs may not be suitable. In addition, the MRF553T is capable of handling higher power levels while remaining reliable and efficient.
Conclusion
Overall, the MRF553T transistor is a reliable and versatile option for radio systems and high power applications. The increased current capacity and reduced impedance offer many advantages, making it an important part of any system design. For those involved in radio equipment construction or high power applications, the MRF553T is an important consideration.
The specific data is subject to PDF, and the above content is for reference
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