MRF559G

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RF transistors are used in the most common device associated with radio frequency (RF) applications which is the RF amplifier. MRF559G is a high-gain RF transistor of the 2.45GHz frequency range from the respected semiconductor manufacturer Motorola. This device is built for high gain and wide bandwidth applications, allowing for exceptional performance to be achieved. MRF559G can be used for a wide range of applications, such as TV transmission and satellite receivers, point to point systems, baseband processors, wireless network systems, spectrum and modulation analysis systems, as well as harmonics and signal generators. This article will explain the application field and working principle of the MRF559G.

The MRF559G is a NPN RF transistor with a gain at the high frequency of 17dB at the highest power of 200mW. This device has a special structure with a high-efficiency collector into the emitter injector which allows a high gain and stable linear performance. Additionally, it has surface mount technology which makes it ideal for applications that require high levels of miniaturization.

The MRF559G has a peak frequency of 2.45GHz and a small signal gain at 950MHz of 10dB. It has an intermodulation distortion of 8dB and it is fully shielded, allowing it to be used in applications where electromagnetic interference is an issue. In addition, the device has a maximum power output of 200mW and a third order IMD (IIP3) at 2.45GHz of +43dBm, allowing it to be used in applications such as satellite receivers and wireless network systems. It also has a high level of broadband noise suppression of -50dB at 900MHz, allowing it to be used in high frequency applications.

When it comes to working principle, the MRF559G is designed using an NPN type bipolar transistor in a double collector structure. This allows a high degree of linearity, enabling the device to operate at higher frequencies. It also provides excellent gain at high frequencies and is able to handle high levels of power in order to produce the desired response. The device also has a highly efficient bipolar collector, which allows it to produce high current gains while maintaining an extremely low noise floor.

The MRF559G has a wide frequency range, making it suitable for a variety of applications in the RF industry. It is a highly reliable device built using advanced semiconductor technology, allowing the device to operate effectively in high temperature environments. It is also a highly efficient device, making it ideal for applications that require high performance.

In conclusion, the MRF559G is a highly effective device for applications in the RF industry. It has a wide frequency range, high efficiency and reliability, as well as superb linearity and gain. This makes it ideal for applications such as satellite receivers, wireless networks, and spectrum and modulation analysis systems. Its small signal gain at 950MHz and third order IMD (IIP3) of +43dBm, allows it to be used in demanding applications, while its surface mount technology makes it ideal for applications that require high levels of miniaturization. As such, the MRF559G is a highly effective device for a wide range of applications in the RF industry.

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