MRF5P21180HR5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MRF5P21180HR5 is a type of metal oxide semiconductor field-effect transistors (MOSFETs) specifically designed for radio frequency (RF) applications. MOSFETs are one of the most popular types of field effect transistors that are extensively used in switching and amplification applications in both discrete and integrated electronics circuit configurations.

MOSFETs Basics

MOSFETs employ a three-element planar construction with a source, a drain, and a gate. The source and drain are the ends of the channel, while the gate electrode is laid in between, controlling the channel width. It works as a voltage-controlled field effect transistor (FET), with its conductive property varying proportionally with the voltage applied to the gate. As the gate voltage increases, the channel widens and the drain current increases proportionally. Once the gate voltage reaches its threshold value, the MOSFET turns on and current starts to flow at very low voltage across the channel.

MOSFETs offer several advantages over other types of FETs. They have fast switching speed, wide acceptance of supply voltage, good noise immunity, low power consumption, and higher dielectric breakdown voltage. In addition, they require a very small gate charge, have high input impedance, and are capable of high current output.

MRF5P21180HR5 Application Field and Working Principle

MRF5P21180HR5 is a MOSFET that is designed for RF applications, such as RF amplifiers, RF switches, antenna tuners and wireless base stations. It also has wide acceptance of supply voltage, low gate charge and fast switching speeds, which make it an ideal choice for high-frequency applications such as wireless communications. It also has good noise immunity and high input impedance, which makes it an ideal choice for mobile and other demanding applications.

The MRF5P21180HR5 works on the principle of voltage-controlled field-effect transistor. It has two terminals, the source and the drain, and a control electrode or the gate. When a voltage is applied to the gate electrodes, it attracts the positively charged carriers and causes them to accumulate in the region between the source and the drain. This accumulation forms a conductive channel. As the gate voltage increases, the channel widens and more current flows from the source to the drain. The magnitude of current depends on the voltage applied to the gate.

The key features of the MRF5P21180HR5 include its high noise immunity, low gate charge and wide acceptance of supply voltage. This means that it can be used in a variety of different applications from radio station transmissions to mobile base stations, and it will be able to maintain a high level of signal quality while consuming low power. It is also suitable for applications that require high frequency or wide band operations such as satellite communications or wireless base stations.

The MRF5P21180HR5 is a robust and cost-effective MOSFET that is ideal for RF applications. It is easy to work with and comes with a wide range of advantages, making it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference