MRF5S21090HSR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.11GHz
Gain:	14.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	850mA
Power - Output:	19W
Voltage - Rated:	65V
Package / Case:	NI-780S
Supplier Device Package:	NI-780S
Base Part Number:	MRF5S21090

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MRF5S21090HSR3 is a high power gallium arsenide field-effect transistor (FET), designed for operation in the 28GHz–30GHz band. This device operates over a wide range of frequencies and is ideal for a variety of wireless and multimedia applications. This device is typically used for amplifying and receiving signals in applications such as satellite communication, automotive radars, 5G base station radios, and Wi-Fi radios. This device is an enhancement-mode power transistor that is capable of operation at frequencies up to 30GHz. It is constructed with a MonoGate oxide-semiconductor structure and utilizes an epoxy plastic package with a very low-inductance transmission line. The device has a low noise figure, along with high linearity, making it ideal for a variety of different linear and nonlinear applications.The MRF5S21090HSR3 can be used in a number of different applications. It is capable of providing high-power gain when used in amplification applications, making it ideal for use in satellite communication and other wireless applications. Additionally, it can be used in the receiver path of a telecommunication system, providing a high degree of linearity and low-noise operation. The device can also be used in automotive radar systems, providing increased sensitivity and range. Additionally, it can be used in 5G base station radios, Wi-Fi radios, and other wireless communications applications.The device is constructed with an N-channel MOSFET with a symmetrical drain-source structure. It has a gate length of 0.3 μm, a drain-source voltage of 40V, and a drain current of 18A. The device is rated for a drain-source breakdown voltage of 60V, with a potential between ID and IDSS of 1.97 V. The maximum junction and storage temperature of the device are +175 °C and +150 °C, respectively. Additionally, the device has an on-state resistance of 10W. The device has a cut-off frequency of 30GHz and a bandwidth of 12GHz, making it ideal for a wide range of applications. The device also features a maximum power gain of 20dB and a 1dB compression point of 12.7dBm. The device has a 0.4 dB noise figure and an IP3 of 22.4dBm, making it a great choice for transmitting and receiving highly sensitive signals. The device utilizes an epoxy plastic package with a low inductance transmission line to provide optimum performance in high-frequency applications. The package also provides excellent heat dissipation and radiation performance and helps to protect the device from moisture and other contaminants. To conclude, the MRF5S21090HSR3 is a high power gallium arsenide field effect transistor that is ideal for applications such as satellite communication, automotive radars, 5G base station radios, and Wi-Fi radios. This device has low noise figure and high linearity, and is capable of providing high gain and wide bandwidth operation when used in amplification applications. Additionally, it utilizes an epoxy plastic package with a low-inductance transmission line to provide optimum performance in high-frequency applications.

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