MRF5S21045NBR1

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MRF5S21045NBR1 is a type of transistor categorized under the family of FETs, MOSFETs, and RF devices. It is especially optimized for high-efficiency operation from 130 to 170 MHz. Because of their high gain, efficient operation, and ruggedness, RF transistors are heavily used in RF amplifier and oscillator design.The MRF5S21045NBR1 is an N-Channel Enhancement-Mode Field Effect Transistor with a maximum drain voltage of 45V and a maximum drain current of 8A. It is constructed on an Air Cavity Silicon Nitride substrate, which means less susceptibility to stray magnetic fields and superior temperature stability compared to other transistors. Additionally, the MRF5S21045NBR1 is designed to handle high-power inputs and can handle power levels up to 26.5dBm.The MRF5S21045NBR1 has a typical noise figure of 1.5dB and an associated gain of 15.0dB. This is ideal for RF amplifier applications as it provides a good combination of low-noise, high power, and high-efficiency operation. The associated frequency range of the transistor ranges from 130MHz to 170MHz, which makes it suitable for use in high-bandwidth wireless communication systems such as Wi-Fi, Bluetooth, and GPS.The MRF5S21045NBR1’s working principle is based on the MOSFET principle, which is a type of field-effect transistor. In this type of transistor, the gate-source voltage is used to control the current flow through the device’s channel. This is why the MRF5S21045NBR1 is called an enhancement-mode device because it requires the application of a voltage to the gate before current can flow through the device. The enhanceme-mode also helps to provide improved switching performance as well as better drain-source dV/dt immunity.The MRF5S21045NBR1 is an ideal choice for a wide range of RF amplifier and oscillator designs. Its combination of low-noise, high-power, and high-efficiency operation makes it suitable for use in many high-bandwidth wireless communication systems. Additionally, the MRF5S21045NBR1 is constructed on a specially designed Air Cavity Silicon Nitride substrate, which makes it more temperature-stable and less susceptible to stray magnetic fields. Thus, it can be used in applications where power dissipation and switching speed are both important factors.

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