| Allicdata Part #: | MRF5S9101MR1-ND |
| Manufacturer Part#: |
MRF5S9101MR1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 68V 960MHZ TO2704 |
| More Detail: | RF Mosfet LDMOS 26V 700mA 960MHz 17.5dB 100W TO-27... |
| DataSheet: |  MRF5S9101MR1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 960MHz |
| Gain: | 17.5dB |
| Voltage - Test: | 26V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 700mA |
| Power - Output: | 100W |
| Voltage - Rated: | 68V |
| Package / Case: | TO-270AB |
| Supplier Device Package: | TO-270 WB-4 |
| Base Part Number: | MRF5S9101 |
Description
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The MRF5S9101MR1 is a type of metal oxide semiconductor field effect transistor (MOSFET). It is designed for numerous high-frequency applications, such as RF amplifiers, mixers, and other circuits operating in the ½ m to 4 mMHz range. It is also suitable for applications that require high power levels, such as high-power amplifiers, as well as high-power RF switching circuits. MOSFETs are transistors that operate by allowing current to flow between the source and the drain terminals when the gate of the transistor is charged with a voltage. The MRF5S9101MR1 includes several features to make it well suited for RF applications, such as its 50-volt drain-source breakdown voltage, its low total gate charge, and its low operating capacitance. The MRF5S9101MR1 is typically used as an amplifier or a switch in a circuit. It is constructed with a P-type material for the drain, source, and gate and an N-type material for the substrate. When the gate of the transistor receives a positive voltage, the channel between the source and the drain is opened and current is allowed to flow. As the positive voltage increases, the current that can flow through the channel increases as well. The MRF5S9101MR1 also has a very low input capacitance, which allows it to operate efficiently at high frequencies. This is important for RF amplifiers, as a low input capacitance allows the transistor to switch quickly and accurately without generating any unwanted noise. Additionally, the transistor has a low gate-drain capacitance, which ensures that any signals passing through the transistor are not distorted by the effects of the gate-drain capacitance. The MRF5S9101MR1 is an ideal choice for RF applications due to its low parasitic capacitance, high gain, and low voltage operation. It is capable of operating at high frequencies and can handle large amounts of power with minimal distortion. As such, it is widely used in various RF applications, such as power amplifiers and RF switching circuits.The specific data is subject to PDF, and the above content is for reference
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