MRF5S21090HR3

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MRF5S21090HR3 is a N-Channel Enhancement Mode MOSFET that is designed to operate in high frequency radio frequency (RF) environment. It is an important component for those who work with RF applications such as wireless communications, radar, and broadcasting.

MRF5S21090HR3 is manufactured on an 8-micron, high-voltage, 2-layer metal-oxide semiconductor (HV-MOS) process and designed to handle a maximum drain source voltage of 45 volts and a peak drain current of 80 amps. The maximum operating drain source voltage range is -8 to +45V and maximum gate threshold voltage range is -7 to +8V. Featuring a low total gate charge of 7 nanocoulombs and low on-state resistance of 0.6 ohms, it is ideal for high frequency applications.

The device\'s real life performance has been tested for a variety of product intended applications. When tested for RF low and high bias breakdown measurement, it reached a current of 100 mA at voltages up to 140V and 200mA at 180V. The total harmonic distortion was 3.2% during the test. These tests showed the excellent performance of MRF5S21090HR3 in RF conditions and high frequency operation.

At a low frequency, the device\'s high voltage MOSFET process contributes to a reduction in on-state resistance and gate to drain capacitance. These characteristics allow for more power to be delivered efficiently. MRF5S21090HR3 also features an improved fast switching speed and low power loss, making it suitable for Pulse Width Modulation (PWM).

The working principle of MRF5S21090HR3 is based on a field effect transistor\'s (FETs) phenomena. An applied voltage triggers an electric field that permeates through the source to the drain terminals and channels the current, hence the term "field effect". Its gate is used for controlling the drain current. This makes it ideal for power supply applications and switching operations since this type of transistor has a higher input impedance than any other type.

MRF5S21090HR3 is suitable for use in a wide range of applications such as automotive, computing and industrial solutions. Its high operating temperature range up to 175oC in the 8-micron process make it a reliable choice for automotive and industrial solutions. With its low total gate charge of 7 nanocoulombs and excellent RF performance, it also makes a great choice for high-performance RF applications.

In conclusion, MRF5S21090HR3 is a versatile device that is ideal for demanding applications in high-power automotive, industrial, and RF applications due to its superior performance characteristics. With its low total gate charge and excellent RF performance, it is an excellent choice for those who are looking for a transistor device that can meet the challenges of their applications.

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