MRF5S19150HR3

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MRF5S19150HR3 is a high-performance, high-frequency laterally diffused metal oxide semiconductor field effect transistor (LDMOS FET). It is specifically designed for hundreds of KW UHF TV, shortwave, and broadband communication applications. The device is designed with a low capacitance N-channel MOSFET architecture having a 60V drain-source breakdown voltage, up to 9.15 dB of gain, 7.5 watts of power output and is compatible with 5.1:1 VSWR.

The MRF5S19150HR3 is a two-terminal device used for controlling electric current through two possible paths, known as the drain and the source. Constructed from semiconductor materials, a FET is comprised of a source region, drain region and a gate region. Along with a resistive channel between the source and drain, the gate allows for the external control of current flow, as well as determining the width of the channel. The drain current flow is related directly to the gate to source voltage.

The MRF5S19150HR3 has been designed to provide reliable control of high-frequency, high-power currents, making it effective in a variety of fields, including radio frequency (RF) communication applications such as shortwave, broad band, and UHF TV applications. The device is designed with a low-capacitance N-channel MOSFET architecture, offering up to 9.15 dB of gain, 7.5 watts of power output and a VSWR of 5.1:1. This design offers excellent application performance, making it ideal for applications needing high-frequency transmitters, amplifiers, pulse generators, and cellular base stations. The device is also well suited for applications requiring low-noise amplification, such as TV amplifiers, digital receivers, CATV amplifiers and broadcast transport systems.

The MRF5S19150HR3 is based on basic operating principles, known as the “Junction Field-effect Transistor (JFET)”. This transistor makes use of three distinct elements, the source, drain and gate, which are biased in order to create a current flow that is controlled by the gate. A channel, usually fabricated from semiconductor material, is created at the gate, allowing current to flow easily between the source and drain while also having a relatively high resistance between gate to source. The source and drain are connected to the gate via a gate oxide, with the device able to control current flow between source and drain depending on the voltage applied to the gate.

The MRF5S19150HR3 offers excellent performance and high levels of reliability, making it an ideal device for communications applications where demanding performance is required. Thanks to its low capacitance, high gain, and power output, as well as its compatibility with VSWR of 5.1:1 ratio, the device is well suited for output power amplifier applications, mobile station base stations and digital TV broadcasting. Moreover, the device is ideal for applications requiring low-noise amplification, such as TV amplifiers, digital receivers, CATV amplifiers and broadcast transport systems.

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