MRF5S9100NR1 Allicdata Electronics

MRF5S9100NR1 Discrete Semiconductor Products

Allicdata Part #:

MRF5S9100NR1TR-ND

Manufacturer Part#:

MRF5S9100NR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 68V 880MHZ TO-270-4
More Detail: RF Mosfet LDMOS 26V 950mA 880MHz 19.5dB 20W TO-270...
DataSheet: MRF5S9100NR1 datasheetMRF5S9100NR1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 880MHz
Gain: 19.5dB
Voltage - Test: 26V
Current Rating: --
Noise Figure: --
Current - Test: 950mA
Power - Output: 20W
Voltage - Rated: 68V
Package / Case: TO-270AB
Supplier Device Package: TO-270 WB-4
Base Part Number: MRF5S9100
Description

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The MRF5S9100NR1 is an RF device in the form of a laterally diffused MOSFET, capable of handling up to 40 watts of power. It is a switching transistor capable of operating in both linear and saturation modes, making it particularly suitable for frequency conversion and amplification applications that require high-power gain and high-order harmonics. This makes it ideal for applications where high-frequency stability is a primary requirement.

The MRF5S9100NR1 is available in a variety of arrangements, including those with single or dual gate pins, as well as an extended frequency range. Thanks to its high-precision architecture and superior gain, the device is capable of achieving extremely high levels of performance.

The MRF5S9100NR1 is designed to be used in wireless applications, such as HDTV, wide band communication systems, DBS, CCTV applications, and broadband cable networks. It is also suitable for use in other types of applications, such as power amplifiers and RF switching.

The MRF5S9100NR1 operates on the principle of field-effect transistor (FET) action. In this type of device, an electric field controls the flow of electrons from the source to the drain, thereby creating a current. The voltage applied to the gate terminal controls the current, allowing the device to function as a switch or an amplifier. The MRF5S9100NR1 also incorporates a unique geometry, which helps to reduce noise emission, thereby increasing the device\'s overall efficiency.

The performance of the MRF5S9100NR1 is further enhanced by its input and output impedance, as well as its harmonic suppression capabilities. The device also features high-frequency immunity, meaning that it can withstand intense electromagnetic fields.

The MRF5S9100NR1 is considered to be one of the most reliable and efficient devices in its class. It is also highly cost-effective, making it an attractive option for many applications.

In conclusion, the MRF5S9100NR1 is an RF device designed for use in a variety of applications. It is particularly well suited for those that require stability, efficiency, and high-precision control. Thanks to its unique features and superior performance, the MRF5S9100NR1 is a highly reliable and cost-effective solution for many types of applications.

The specific data is subject to PDF, and the above content is for reference

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