MRF586G

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The MRF586G is a NPN silicon RF transistor that can be used for a variety of applications, ranging from broadcast to two-way radio systems. Manufactured by Motorola, this transistor is designed to handle RF thermal load up to 20 Watts in linear modes. It is often used in low to medium power transmitters in the broadcast band and is ideal for use in the HF and VHF bands.

The MRF586G is designed with a modern NPN silicon transistor construction, which gives it good electrical characteristics, remarkable gain, and high frequency output. Its low noise figure helps to minimize signal distortion when used in shortwave receivers and other applications requiring low distortion.

The device is designed to provide a high gain that ranges from 11 to 12 dB over a variety of frequencies spanning from 10 MHz to 1000 MHz. It has a good breakdown voltage of around 140 throughout these frequencies and a collector efficiency of 50.5 percent.

The MRF586G provides excellent linearity, with a collector efficiency of 50.5 percent without the need for complex external circuitry. It also has a high power handling capacity of 20 Watts when operated under linear conditions up to 1000 MHz, giving it broad application opportunities.

The MRF586G works on the principle of transistor action, enabling current to flow from the collector to the emitter. The device is powered by an RF signal, applying it to the base of the transistor. This results in a current flow from the collector to the emitter and then out through the RF output port. The gain of the device increases in correspondence with the increase of the applied RF signal, resulting in a larger output power.

The MRF586G provides a reliable and efficient approach to RF amplification in a variety of broadcast and two-way radio systems. It is perfect for applications where a high output power is required with the minimum of distortion.

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