MRF5S9101NBR1

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The MRF5S9101NBR1 is a power test LDMOS transistor device for radar and broadcast applications. This high-performance device has a low noise input and a high output power, making it suitable for use in RADAR systems such as military and civil aviation radars. It operates from 200MHz to 1000MHz and is designed for applications up to 15 watts.

The MRF5S9101NBR1 is an enhancement-mode power field effect transistor (FET) of the N-Channel junction field effect transistor (JFET) type. It is a two terminal device with a siphon-regulated drain current that is voltage-controlled via a third terminal, commonly known as a gate. The gate terminal controls the amount of current that flows between the source and drain terminals of the transistor, depending on the input voltage applied to the gate. This type of transistor is suitable for RF signal amplification, switching, and phase shifting applications in communication systems.

The device has a breakdown voltage of about 20 volts and a maximum drain current of 6.5A. Its maximum power dissipation is at least 130 watts, with an output power of up to 15 watts. Its open circuit extrinsic capacitance is also relatively high when compared with other power MOSFETs.

The MRF5S9101NBR1 operates with an input voltage of up to 20 volts and an output voltage of up to 20 volts. It features an ESD protection diode on the gate which helps reduce the reverse voltage applied to the gate. This helps to protect the transistor from ESD events. The transistor also includes a protection circuit which helps to limit the amount of current that can be supplied by the gate, ensuring that the maximum power rating is not exceeded.

The MRF5S9101NBR1 is mainly used in RADAR systems, and its high-power output coupled with its low noise makes it suitable for applications in these systems. It also has excellent linear regulator and peak efficiency, meaning that it is an ideal choice for power amplification in these systems. The device is mainly used in applications where high power is required and low noise is desired.

The MRF5S9101NBR1 is a robust device with a long operating life, making it suitable for long-term applications in communication systems and RADAR systems. It has a low on-state drain resistance, making it suitable for high frequency, high speed switching applications. Its low power dissipation rating and small circuit board footprint help to reduce system costs.

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