MRF5S9100NBR1 Allicdata Electronics

MRF5S9100NBR1 Discrete Semiconductor Products

Allicdata Part #:

MRF5S9100NBR1TR-ND

Manufacturer Part#:

MRF5S9100NBR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 68V 880MHZ TO-272-4
More Detail: RF Mosfet LDMOS 26V 950mA 880MHz 19.5dB 20W TO-272...
DataSheet: MRF5S9100NBR1 datasheetMRF5S9100NBR1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 880MHz
Gain: 19.5dB
Voltage - Test: 26V
Current Rating: --
Noise Figure: --
Current - Test: 950mA
Power - Output: 20W
Voltage - Rated: 68V
Package / Case: TO-272BB
Supplier Device Package: TO-272 WB-4
Base Part Number: MRF5S9100
Description

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MRF5S9100NBR1 is a depletion-mode MOSFET transistor featuring exceptionally low noise characteristics. It is a special radio frequency (RF) transistor developed special for low noise applications in the telecom industry. This MOSFET transistor is packaged in a TO-252 (SOT-166) plastic case and offers excellent thermal and mechanical performance at a relatively low cost. It is just one example from a range of transistors developed for RF applications where low noise is required.

MOSFET transistors are field-effect transistors (FETs) which have a semiconductor gate with a biased gate-source relationship. The gate controls the current flow between the drain and source terminals which are connected to a metallurgically deposited insulation gate. The bias applied to the gate allows this current to flow when the proper voltage is present, just like other transistors.

In the case of the MRF5S9100NBR1, this transistor is optimized specifically for low noise in RF applications. This is achieved through the use of a reverse-biased structure which helps to minimize the recombinations of minority carriers at the gate-drain junction. This reduces the possibility of introducing noise into the system. Additionally, the increased gain of the MOSFET transistor also helps minimize noise in the system.

The MRF5S9100NBR1 is well-suited for many low noise, RF applications. It is especially useful in digital communications and wireless systems, where low noise levels are critical. It can also be used in remote control and microwave systems, where it is necessary to maintain low noise levels for correct signal transmission. Additionally, this transistor can be used in RF power amplifiers that require low noise and high gain.

In summary, the MRF5S9100NBR1 is an excellent choice for applications that require low noise levels due to its reverse-biased structure, high gain, and thermal and mechanical performance. It is a good solution for RF power amplifiers, digital communications systems, microwave systems, and remote control systems. The depletion-mode MOSFET transistor offers exceptional noise characteristics and is packaged in a TO-252 (SOT-166) plastic case.

The specific data is subject to PDF, and the above content is for reference

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