Allicdata Part #: | MRFE6S9045GNR1-ND |
Manufacturer Part#: |
MRFE6S9045GNR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 66V 880MHZ TO-270-2 |
More Detail: | RF Mosfet LDMOS 28V 350mA 880MHz 22.1dB 10W TO-270... |
DataSheet: | MRFE6S9045GNR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 22.1dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 350mA |
Power - Output: | 10W |
Voltage - Rated: | 66V |
Package / Case: | TO-270BB |
Supplier Device Package: | TO-270 WB-4 Gull |
Base Part Number: | MRFE6S9045 |
Description
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Introduction
MRFE6S9045GNR1 is a high power n-channel enhancement mode type field effect transistor (FET), which is mainly used in high power radio frequency (RF) applications. It is designed to operate with extremely low distortion in radio frequency applications up to 500 MHz.Features and Benefits
MRFE6S9045GNR1 offers several features and benefits. These include:* High power handling capability, up to 500 Watts peak;* High gain and high efficiency;* Exceptional linearity;* Ultra-low distortion at high frequencies;* Low gate capacitance and gate charge;* Low thermal resistance.Applications
MRFE6S9045GNR1 is a perfect choice for various advanced high power and low distortion applications such as broadcast, two-way and cellular radios, TV transmitters and satellite communication. It can be used in various RF audio and video applications, power line amplifiers, wireless LANs and wireless infrastructure.Working Principle
MRFE6S9045GNR1 is a type of FET which operates on the principle of a three-terminal semiconductor device with a voltage gate controlling the flow of current between the source and drain. It uses a voltage gate to switch the transistor on and off and modulate the current flow between the source and drain.When the gate voltage is applied, a depletion region is created between the source and drain, blocking current flow. When the gate voltage is removed, the depletion region disappears and the current flow resumes. This principle of operation makes FETs both the most efficient and the most linear of all field effect transistors.Conclusion
MRFE6S9045GNR1 is a perfect choice for various advanced high power and low distortion applications. It is a high power n-channel enhancement mode type field effect transistor (FET) designed to operate with extremely low distortion in radio frequency applications up to 500 MHz. It offers exceptional linearity, ultra-low distortion at high frequencies, low gate capacitance, gate charge and low thermal resistance. It is mainly used in broadcast, two-way, cellular radios, TV transmitters, satellite communication and various RF audio and video applications. It operates on the principle that a voltage gate controls the current flow between the source and drain, switching the transistor on and off and modulating the current flow.The specific data is subject to PDF, and the above content is for reference
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