MRFE6VP8600HR6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRFE6VP8600HR6 is a high-performance broadband enhancement mode pseudomorphic high electron mobility transistor (E-HEMT) designed specifically for use in the 28GHz frequency band for broadband, low noise amplification applications. The MRFE6VP8600HR6 operates under constant current and temperature conditions, making it an ideal candidate for high-volume production.

The MRFE6VP8600HR6 is a double-metal process, High-electron Mobility Transistor (HEMT) with an epitaxial layer based on the pseudomorphic high-electron-mobility transistor (p-HEMT) technology. It is designed to provide superior performance in UHF, VHF and microwave frequency applications such as cellular radio, point-to-point radios, satellite communications and VSAT technologies. The device has an excellent combination of high voltage breakdown, gain, power, and noise performance for variable RF power amplifier applications operating over the frequency range from 28GHz.

The device\'s high performance is obtained via its unique double-metal process, based on large area, narrow channel HEMT transistors. The small gate lengths enable high current densities and excellent saturated drain-source voltage for low-drain voltage operation. Low parasitic gate-source and gate-drain capacitances ensure superior thermal electro-magnetic (EM) performance in the RF range. The gate-to-source capacitance is also reduced significantly, helping to reduce input noise and improving performance. The large area transistor also has a lower electric field compared to other technologies.

The low noise figure is achieved by the efficient use of a low-threshold voltage, high gain-bandwidth product and high-reliability design. The transistors feature enhanced junction oxide reliability. Low gate oxide leakage and low junction capacitance resulting from its low gate turn-on voltage and reduced gate-to-source capacitances allow operation at high frequencies with improved peak-to-average current ratios.

The MRFE6VP8600HR6 works by providing a high-output current, enabling devices to be used in high power amplification applications. In addition, the low gate-turn-on voltage improves the device\'s linearity with reduced sensitivity to phase noise. This helps ensure a simpler, more efficient amplifier stage design with improved signal fidelity.

The device\'s unique double-metal process helps enhance the overall device performance. By using dual-metal contacts, the maximum drain-source breakdown voltage can be increased. Additionally, the low gate-drain current leakage reduces power consumption and heat dissipation.

The MRFE6VP8600HR6 is designed for use in a variety of applications, such as microwave radio frequency (RF) power amplifiers, satellite communication links, aircraft radio communications, and X-band point-to-point radio systems. This device is ideal for high frequency, low noise, and high-power applications that require high drain efficiency and high power handling.

In conclusion, the MRFE6VP8600HR6 is an advanced, high performance, pseudomorphic High Electron Mobility Transistor designed for the 28GHz frequency band. It offers low noise figures and enhanced junction oxide reliability, combined with improved linearity, gain, power handling and drain efficiency. This makes it an excellent solution for applications requiring high-volume performance, such as satellites, aircraft radio, and point-to-point radio systems.

The specific data is subject to PDF, and the above content is for reference