Allicdata Part #: | MRFE6S9201HR3-ND |
Manufacturer Part#: |
MRFE6S9201HR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 66V 880MHZ NI-780 |
More Detail: | RF Mosfet LDMOS 28V 1.4A 880MHz 20.8dB 40W NI-780 |
DataSheet: | MRFE6S9201HR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 20.8dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 40W |
Voltage - Rated: | 66V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRFE6S9201 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRFE6S9201HR3 is a RF (Radio Frequency) enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is suitable for a wide range of microwave application projects. Its high power enables it to be used for applications that require high current and high drive capability, such as amplifier and switching circuits. The device has excellent thermal stability, low gate charge and low thermal impedance, making it suitable for a variety of applications.
Many different applications rely on RF MOSFETs, but they are especially useful in high-power radio transmitters and linear amplifiers. MRFE6S9201HR3s are also ideal for power amplifiers and switching circuits used in wired and wireless consumer electronics and communication products, providing excellent performance and reliability.
This RF MOSFET supports a wide operating frequency range, up to 8.0GHz, making it suitable for the most challenging of RF projects. It is also rated for a wide range of power levels, from 3W to 90W. The device supports up to a 20V gate-source voltage and can handle up to 2.2A of continuous drain current, making it suitable for many different applications.
The working principle behind an RF MOSFET is based on the ability of the device to control the current flow between the source and the drain. The current flow is directly proportional to the gate-source voltage, so the drain terminal is connected to the output of the circuit. The FET is arranged in a voltage divider circuit with a capacitor and a resistor, which provides a stable DC bias voltage to the gate. When a positive voltage is applied to the gate, current flows through the device and switches on. The FET behaves like an open switch, and the circuit will remain switched on until the gate voltage is reversed. The device has a very low current leakage, making it suitable for use in low power applications.
The MRFE6S9201HR3 is a popular and widely used high-power RF device due to its high current and drive capability, low gate charge and low thermal impedance. Its high power and wide frequency range also enable it to be used for a wide range of microwave applications, from wireless communication to consumer electronics. The device is reliable and relatively easy to use, making it an ideal choice for amateur radio enthusiasts.
The specific data is subject to PDF, and the above content is for reference
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