MRFE6VP5600HSR6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRFE6VP5600HSR6 is an insulated-gate bipolar transistor (IGBT) that is used as an amplifier in radio-frequency (RF) and microwave applications. This power device is based on a vertical N-channel MOSFET and a vertical P-channel IGBT, which is both mounted on the same silicon die. This makes it an ideal choice for high-frequency DC/DC conversion, RF amplifiers, and RF low-noise amplifiers (LNA).

The MRFE6VP5600HSR6 is an excellent choice for high-frequency amplifier designs due to its high current density, fast switching speed, and low output resistance. Its maximum frequency range is 5.6GHz and it has a maximum output power of up to 25 watts. The device has a low gate capacitance of 1.8pF, which helps reduce noise and enables better frequency response. The device’s low output resistance makes it ideal for amplifier designs up to 5.6GHz.

The MRFE6VP5600HSR6 power device is designed to operate in the temperature range of -55C to +175C. It has superior thermal management that helps keep the device cool. The device’s hermetically-sealed plastic package is dust-proof, making it an ideal choice for high-reliability applications. It also features an integrated ESD (electrostatic discharge) protection that helps prevent unintentional damage due to static electricity.

The MRFE6VP5600HSR6 operates in the class A, AB mode and can be used in Class B and C applications with the help of a bias network. The device is designed to work as a linear amplifier when providing high gain and low distortion. The device can also be used as a switch for its high power handling capability. The fast switching speed and low gate charge of the device makes it ideal for Class D applications as well.

The MRFE6VP5600HSR6 is an ideal choice for RF and microwave signal amplifiers due to its low output noise and extremely low distortion characteristics. The device’s low gate charge and high current density make it suitable for high-speed switching applications. The hermetically-sealed package helps protect the device against high humidity and dust, making it ideal for high-reliability applications. The ESD protection on the device helps protect it against static electricity damage. All of these features make the MRFE6VP5600HSR6 a great choice for RF and microwave applications.

The specific data is subject to PDF, and the above content is for reference