MRFE6S9160HSR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	880MHz
Gain:	21dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.2A
Power - Output:	35W
Voltage - Rated:	66V
Package / Case:	NI-780S
Supplier Device Package:	NI-780S
Base Part Number:	MRFE6S9160

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The MRFE6S9160HSR5 is a Field Effect Transistor (FET) intended for broadband use in the frequency range of 0.1-1000MHz, and is capable of producing high currents and low noise. It is classified as a radio frequency (RF) transistor, as it is designed to amplify radio-frequency signals before they are transmitted by a radio transmitter. In order to understand its use and applications, it is important to first understand its working principle. A FET is a three-terminal semiconductor device composed of a source, a gate, and a drain. The source-gate voltage creates an electric field between the two contact points, causing the electrons to flow from the source to the drain. It is this flow of electrons that gives the FET its name, as it controls the field instead of allowing an electrical current to pass through it. As electrons flow through the FET, current is produced in the drain terminal. When used in an RF application, the MRFE6S9160HSR5 takes advantage of its high current and low noise characteristics to amplify a weak RF signal prior to transmission. An RF signal is first generated by a radio transmitter, and is then sent to the MRFE6S9160HSR5, where it is amplified and sent back to the radio transmitter, resulting in a stronger, more powerful signal. The FET’s high current, low noise characteristics make it an ideal candidate for this purpose, as it is capable of producing a powerful signal without introducing too much noise. The MRFE6S9160HSR5 is also used in a variety of other applications such as low noise amplifiers, oscillators, and in oscillator circuits. Its low noise characteristics also make it well suited for use as a radio frequency amplifier. The FET’s high current, low noise characteristics make it an ideal candidate for this purpose, as it is capable of producing a large amount of power without introducing too much noise. In addition to its use as an RF amplifier, the MRFE6S9160HSR5 is also used in a variety of other applications such as in oscillator circuits and power management circuits. The FET’s high current, low noise capabilities make it an ideal candidate for these applications as well.In summary, the MRFE6S9160HSR5 is a Field Effect Transistor (FET) designed for use in RF applications, as it is capable of producing high currents and low noise. It is also used in a variety of other applications such as in low noise amplifiers, oscillators, and power management circuits. Its high current and low noise characteristics make it an ideal candidate for these applications. As a result, the MRFE6S9160HSR5 is an essential component for a variety of electronics applications.

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