MRFE6S9205HSR5

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Introduction

The MRF6S9205HSR5 is a high-power RF MOSFET suitable for a wide variety of applications such as broadcast, TV, and WLAN applications. It is a high-saturated-power MOSFET that features a field-proven, reliable design with a unique combination of ruggedness and low-noise performance.

Application Field

The MRF6S9205HSR5 is ideal for very high RF power applications such as short range radio frequency applications, FM broadcast radio, TV, VCO and common-gate amplifier applications. This device is also suitable for other applications such as:

• Wireless Communications
• Wi-Fi
• Military Radio
• Cable TV Distribution
• Wireless Data
• Jamming Systems
• Radar Systems

Working Principle

The MRF6S9205HSR5 is a MOSFET that is based on the same principle as a traditional bipolar transistor. Instead of using a base, collector and emitter junction, it uses a gate, drain and source junction as the component. The gate is charged with an applied voltage, allowing current to flow from source to drain and the MOSFET then acts as a closed switch.

The key features of the MRF6S9205HSR5 include low-noise performance and ruggedness, as well as high output power. It features a unique high-current drive capability and an extremely low thermal resistance, making it an excellent choice for high-power RF applications. It has an operating frequency range of 0.01 to 200 MHz and is capable of delivering up to 1000 Watts of output power.

Conclusion

The MRF6S9205HSR5 is a high-powered RF device offering a combination of reliability, low-noise performance and ruggedness. It is ideal for a variety of applications, including FM broadcast radio, TV, Wi-Fi, Wireless Communications, Military Radio, Cable TV Distribution, Wireless Data, Jamming Systems and Radar Systems. The device features a unique high-current drive capability and an extremely low thermal resistance, making it a suitable choice for high-power RF applications.

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