MRFE6VP61K25HSR6

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MRFE6VP61K25HSR6 Application Field and Working Principle

MRFE6VP61K2500HSR6, such as later referred as MRFE6VP61, is a lateral double N-Channel MOSFET designed for highly linear RF applications such as cellular base station amplifier and other wireless communication circuits. It functions as a transistor, allowing current to flow from the drain to the source by varying the voltage applied to the gate. MRFE6VP61 is a Field Effect Transistor (FET) which has both excellent output power, linearity and efficiency.

Application Field

MRFE6VP61 is often used in cellular base station amplifier and other wireless communication circuits applications. It provides high performance and linearity in transmission applications such as 3G and 4G base stations, Wi-Fi, WiMax and other two way radio systems. This MOSFET is ideal for Class AB and Class C push-pull and linear amplifier designs operating in VHF, UHF, and microwave frequency bands. It is designed to operate in 2.5V applications that consume power efficiently.

Working Principle

MRFE6VP61 is a N-channel MOSFET and it works by negatively biasing the gate with respect to the source. This in turn creates negative electric field near the interface of the gate and theChannel. The negative electric field attracts electrons which migrate from the surface of the semiconductor substrate towards the gate. This creates depletion region in the substrate and thereby also creates a barrier for the current flow between source and drain. The electrical field created reduces as the drain current increases and this in turn reduces the barrier height and makes the flow of electrons easier between source and drain. This is the process by which MOSFETs work and allow current to flow from drain to source.

Advantages of MRFE6VP61K25HSR6

MRFE6VP61K25HSR6 offers many advantages compare to other FETs. Its low threshold voltage allows for high input sensitivity, low drain-source resistances lowers heat dissipation, good maximum DC voltage ratings and a wide frequency operation range. Due to its small physical size it is also suitable for high-density designs, and its superior gate charge characteristics allow for excellent total gain linearity (PAE). Additionally, it provides very low channel-to-channel matching.

In Summary

MRFE6VP61K25HSR6 is a transistor-like device that helps control the current flow from the drain to the source. It is designed to operate in 2.5V applications, while providing excellent output power, linearity and efficiency. Its low threshold voltage allows for high input sensitivity, low drain-source resistances ensure low heat dissipation. It also offers small physical size, wide frequency operation range and very low channel-to-channel matching. MRFE6VP61K25HSR6 is ideal for use in cellular base station amplifier and other wireless communication circuits.

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