MUBW10-06A6K Allicdata Electronics
Allicdata Part #:

MUBW10-06A6K-ND

Manufacturer Part#:

MUBW10-06A6K

Price: $ 20.59
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E1
More Detail: IGBT Module NPT Three Phase Inverter with Brake 60...
DataSheet: MUBW10-06A6K datasheetMUBW10-06A6K Datasheet/PDF
Quantity: 1000
10 +: $ 18.71790
Stock 1000Can Ship Immediately
$ 20.59
Specifications
Current - Collector Cutoff (Max): 65µA
Base Part Number: MUBW
Supplier Device Package: E1
Package / Case: E1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 0.22nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 10A
Power - Max: 50W
Current - Collector (Ic) (Max): 11A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Three Phase Inverter with Brake
IGBT Type: NPT
Part Status: Active
Description

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The MUBW10-06A6K is an IGBT Module with outstanding electrical characteristics and performance. This module is intended for use in medium voltage industrial applications and includes both the IGBT and its associated diode, allowing for easy construction of high power switching and drive circuits. The small size and low weight of the MUBW10-06A6K make it ideal for use in applications requiring a compact and lightweight solution.

This module provides superior performance in power circuit design, by offering a wide range of parameters to tailor the module to the application. It has a breakdown voltage of up to 600V, blocking capability of up to 600A, and operating temperatures of up to 150°C. The output current of this module can be controlled by changing the gate voltage, enabling precise control of the device. The low forward voltage drop makes this module highly efficient and suitable for use in high-frequency applications such as resonant inverters, motor drives, and motor controllers.

The MUBW10-06A6K features a planar passivated IGBT chip and a parallel reverse conduction diode. The chip is integrated into the module via a solder-dipped bonding wire, ensuring a reliable connection. The module is then encapsulated in a UL-rated black thermoplastic material, providing added protection. An advanced heat sink design is included to help protect the device from overheating, making it suitable for use in harsh environments.

The IGBT chip of the MUBW10-06A6K operates based on the base-emitter voltage of the transistor, which controls the gate current flow. When the base- emitter voltage is low, there is no current flow, and the IGBT is in an off-state. When the base-emitter voltage is increased, the IGBT turns on and the gate current flows, turning the device on. This can be used to regulate the output current of the module. The included diode operates in parallel with the IGBT, supplying additional current when higher output currents are required.

The MUBW10-06A6K is a highly efficient and reliable module, ideal for switching and drive circuits in industrial applications. With its wide operating temperature range and advanced heat sink design, it is suitable for use in harsh environments. The ability to control the output current with the gate voltage makes this module exceptionally versatile, allowing it to be used in high power applications. The small form factor and low weight of the module make it ideal for use in space-constrained applications.

The specific data is subject to PDF, and the above content is for reference

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