MUBW15-12A7 Allicdata Electronics
Allicdata Part #:

MUBW15-12A7-ND

Manufacturer Part#:

MUBW15-12A7

Price: $ 37.70
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E2
More Detail: IGBT Module NPT Three Phase Inverter with Brake 12...
DataSheet: MUBW15-12A7 datasheetMUBW15-12A7 Datasheet/PDF
Quantity: 1000
6 +: $ 34.27200
Stock 1000Can Ship Immediately
$ 37.7
Specifications
Current - Collector Cutoff (Max): 900µA
Base Part Number: MUBW
Supplier Device Package: E2
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 1nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Power - Max: 180W
Current - Collector (Ic) (Max): 35A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter with Brake
IGBT Type: NPT
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

MUBW15-12A7 is one type of Transistor-Insulated Gate Bipolar Transistor (IGBT) modules. It is a versatile control component widely used in various industrial control applications due to its combined strengths of both a transistor and a thyristor.

The MUBW15-12A7 module specifically consist of a six-pin IGBT and a pair of Free-Wheeling diodes in an anti-parallel connection to prevent over-current destruction of the IGBT and suppress voltage spikes generated from inductive loads. Each component of the module must be properly soldered and connected to a heatsink for proper mounting and thermal management.

The key feature of the MUBW15-12A7 module is its high-current capability and a high-voltage rating. It can support load currents up to 15 A and voltage rating of up to 1200 V. This allows it to be used in medium- to high-power applications such as motor drives, motor speed controls, and power conditioners. Additionally, it has excellent switching performances with a low dynamic turn-on and turn-off times, enabling fast control or switching speed.

When it comes to the working principle of the MUBW15-12A7 module, it is technically similar to that of a conventional transistor. The operation of the IGBT module is based on the principle of minority-carrier conduction, where the movement of electrons across the junction of two layers of charge carriers varies according to the amount of Electric field generated. The IGBT module is designed to provide a direct current to the load. To switch the device on, the voltage is applied on one of the two sets of contacts. This creates an electric field between the two regions, which enables the electron flow (negative charges) from one side of the module to the other. This creates a positive voltage at the positive terminal and a current from the negative terminal.

The MUBW15-12A7 module is highly reliable and versatile, as it can be readily used in a wide range of applications. Its high current capabilities and voltage ratings also make it ideally suited for use in medium- to high-power applications. With its excellent switching performance and fast switching speed, the module can be used to effectively provide reliable control and switching capabilities.

The specific data is subject to PDF, and the above content is for reference

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