MUBW30-12A6 Allicdata Electronics
Allicdata Part #:

MUBW30-12A6-ND

Manufacturer Part#:

MUBW30-12A6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MODULE IGBT CBI E1
More Detail: IGBT Module NPT Three Phase Inverter with Brake 12...
DataSheet: MUBW30-12A6 datasheetMUBW30-12A6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Collector Cutoff (Max): 1mA
Base Part Number: MUBW
Supplier Device Package: E1
Package / Case: E1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce: 1nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Power - Max: 104W
Current - Collector (Ic) (Max): 31A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase Inverter with Brake
IGBT Type: NPT
Part Status: Obsolete
Description

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The MUBW30-12A6 is a popular IGBT module used in a wide range of applications. IGBT modules are a type of insulated-gate bipolar transistor (IGBT) which is a three-terminal power semiconductor device commonly used as an electronic switch or amplifier in various electronics applications. An IGBT is an evolution of the standard bipolartransistor and combines the most desirable features of both the standard bipolar transistor and the MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). The MUBW30-12A6 has a higher voltage rating than other IGBT modules of the same series.

The MUBW30-12A6 module is used in a range of applications, including but not limited to motor control, servo control, renewable energy solutions, automotive, aerospace, and industrial automation equipment. It is ideal for applications requiring high switching frequency and high-current commutation due to its low on-state voltage and higher current ratings. In addition, its low switching losses provide high efficiency and power saving solutions in a wide range of power control applications such as motor control, lighting control, and frequency conversion.

The MUBW30-12A6 module works on the principle of an insulated gate field effect transistor (IGFET). The MOSFET is a type of semiconductor which has a three-terminal source, gate, and drain electrode. The gate electrode consists of an insulating layer made of a dielectric material that allows the electric charge to pass to the gate terminal. A voltage applied to the gate terminal will create an electric field which causes a channel of electron charges to form under the gate, connecting the source and drain electrodes. This enables a current flow between the source and drain terminals. The on-state voltage of the IGBT is generally lower than that of a similar MOSFET.

The MUBW30-12A6 module uses a standard gate drive technology which is capable of switching currents up to a maximum of 30A, with the ability to operate up to a maximum voltage of 12V. The switch is designed to offer superior switching performance and can operate in both single-pulse and multiple-pulse applications. It is designed with a low switching and on-state losses for higher efficiency and power savings. It is also designed with a flexible gate control technology, allowing for easy modification of the gate signals in order to achieve different desired operating characteristics.

The MUBW30-12A6 is an excellent choice for applications that require efficient and reliable power conversion. Its low on-state voltage, wide operating range, and low switching losses make it an ideal choice for a broad range of applications. Its compatibility with standard gate drive technology also makes it an ideal choice for engineers looking for a flexible and reliable solution.

The specific data is subject to PDF, and the above content is for reference

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