MUBW75-17T8

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The MUBW75-17T8 is an IGBT (Insulated Gate Bilateral Transistor) module designed for use in high power applications with a voltage range of 600V to 1200V in high frequency switching systems. It is a hybrid module with an insulated gate unilateral field effect transistor (FET) as well as an isolated reversely connected PNP bipolar junction transistor (BJT).

The MUBW75-17T8 has many uses in industrial automation and power switching applications. It is suitable for use in electric vehicle (EV) and hybrid electric vehicle (HEV) inverters, high-frequency power convertors, motor drive systems, solar inverters, motor control applications, and DC motor drives. The module also has excellent efficiency, very low EMI, long drive cycle life, and high peak currents.

MUBW75-17T8 modules are designed to increase power density, reduce system size and cost, and decrease EMI concerns. The module offers excellent performance and reliability with superior switching effectiveness and low power dissipation due to its low thermal resistance and high current carrying capability. Its reverse diode inhibit function provides excellent short circuit protection and its gate driver circuit reduces gate power losses. The module also offers a high-speed gate signal to prevent cross cone current.

The working principle of the MUBW75-17T8 module is based on the electric field effect and bipolar physics principles. The electric field effect is based on an electric field created by the bias voltage on the gate electrode, which attracts the electrons to the channel and reduces the barrier between the source and drain. This decrease in barrier allows the current to flow and the device to be turned on. The bipolar junction effect is based on the resistance between the collector and emitter of the BJT, which controls the current flow through the device. The gate signal is used to control the current flow.

The module offers fast switching with a reverse diode inhibit function and high EMI performance. When the module is switched off, the integrated reverse diode is turned “on” and the current is removed from the circuit before the IGBT turns “off”. This offers significantly increased reverse current protection for the module and the impedance is reduced through the integrated grounded gate structure. The module also features creepage and clearance protection as well as a high surge current rating, as well as built-in EMI protection.

The MUBW75-17T8 module is therefore ideally suited for applications where fast switching and a high current capacity are required. Its compact design and built-in protection features make the device an ideal choice for a range of industrial, automotive, and consumer applications.

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