| Allicdata Part #: | MUBW15-06A6-ND |
| Manufacturer Part#: |
MUBW15-06A6 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MODULE IGBT CBI E1 |
| More Detail: | IGBT Module NPT Three Phase Inverter with Brake 60... |
| DataSheet: |  MUBW15-06A6 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Current - Collector Cutoff (Max): | 1mA |
| Base Part Number: | MUBW |
| Supplier Device Package: | E1 |
| Package / Case: | E1 |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -40°C ~ 125°C (TJ) |
| NTC Thermistor: | Yes |
| Input: | Three Phase Bridge Rectifier |
| Input Capacitance (Cies) @ Vce: | 0.57nF @ 25V |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 10A |
| Power - Max: | 61W |
| Current - Collector (Ic) (Max): | 18A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Configuration: | Three Phase Inverter with Brake |
| IGBT Type: | NPT |
| Part Status: | Obsolete |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MUBW15-06A6 is a type of Insulated Gate Bipolar Transistor (IGBT) module. IGBTs are semiconductor devices that combine the positive characteristics of two distinct transistor designs, the Bipolar Junction Transistor (BJT) and the Field Effect Transistor (FET). As a result, IGBT modules offer higher current gain and power density over BJT designs, creating a cost-effective solution for improved energy efficiency. An IGBT module, like the MUBW15-06A6, is composed of multiple IGBT chips all connected in parallel or in series and packaged in a compact package.
MUBW15-06A6 modules offer a wide range of applications from high power switching and drive applications, to medium-low power electronic applications such as AC power control, lighting, and automotive applications. With its performance specifications, such as a blocking voltage range of 600V to 1550V, current rating of 40A to 200A, and an avalanche energy rating up to 2500A, MUBW15-06A6 IGBT modules are well-suited for industrial and commercial high power applications.
The MUBW15-06A6 IGBT module works by converting electric current into a high-energy magnetic field through the application of a high electrical current. In the presence of an electric field, the electrons of an n-type semiconductor and the holes in the p-type will move in opposite directions and a metal-oxide field-effect transistor (MOSFET) will be formed. When a voltage is applied, the current will move through the conduction channels, passing between the collector and emitter of the IGBT, causing current gain and producing a power output.
It should be mentioned that the MUBW15-06A6 IGBT module also offers high switching speeds, which are necessary for applications requiring fast turn-on and turn-off times. This feature is beneficial because faster switching speeds will result in improved power efficiency. Additionally, the module offers a robust and reliable construction which can withstand intensive use and frequent switching.
In conclusion, the MUBW15-06A6 is an IGBT module offering users a cost-effective solution for high power applications. It is characterized by its wide voltage range, current rating, and avalanche energy rating, which make it suitable for a variety of applications from high power switching and drive applications, to medium-low power electronic applications such as AC power control, lighting, and automotive applications. Additionally, it is capable of fast switching speeds, which enable improved power efficiency, and offers a robust construction for highly intensive use.
The specific data is subject to PDF, and the above content is for reference
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| MUBW10-06A6 | IXYS | 0.0 $ | 1000 | MODULE IGBT CBI E1IGBT Mo... |
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| MUBW20-06A6 | IXYS | 0.0 $ | 1000 | MODULE IGBT CBI E1IGBT Mo... |
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